研究者詳細 - 臼田　宏治

写真a

ウスダ　コウジ

臼田　宏治

USUDA KOJI

所属

機構・農場研究・知財戦略機構特任教授

外部リンク

論文

Surface-pyramid-induced strain relaxation in (110)-oriented SiGe thin films revealed by Micro-Raman spectroscopy 査読

Yuta Ito, Koji Usuda, Kiu Inami, Naoto Kumagai, Toshifumi Irisawa, Atsushi Ogura

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 209 2026年7月

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記述言語：英語掲載種別：研究論文（学術雑誌）

DOI： 10.1016/j.mssp.2026.110581

Web of Science

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Evaluation of bias-dependent band structure changes in metal–oxide–semiconductor structures with varying doping concentrations using laboratory hard x-ray photoelectron spectroscopy 査読

Takuya Minowa, Koji Usuda, Ryo Yokogawa, Atsushi Ogura

Applied Physics Letters 126 ( 7 ) 2025年2月

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掲載種別：研究論文（学術雑誌）出版者・発行元：AIP Publishing

Direct observation of the band structure variation of electrical devices, such as MOSFETs, during device operation is the most important for understanding MOSFET device operation. However, there are a few reports on the direct measurement of variation in the metal–oxide–semiconductor (MOS) interface band structure during operation, and further investigation is required. This paper focuses on elucidating the changes in the band structure at buried interfaces under applied bias using a nondestructive approach. We conducted measurements using bias-applied laboratory hard x-ray photoelectron spectroscopy (Lab. HAXPES) with liquid gallium (Ga) x-ray source on MOS structures, which are widely recognized as fundamental and commonly used devices. We utilize HAXPES with Ga x-ray, providing high-energy/intensity x-rays, to achieve sufficient detection depth and enable observation of the deeper regions of the silicon substrate buried under gold and silicon dioxide layers. As a result, this approach allowed us to observe bias-dependent peak shifts resulting from changes in the band structure in detail. We observe HAXPES peak shift caused by the different substrate concentrations. Additionally, we obtained detailed information on band bending by applying a wider range of bias compared to previous bias applied HAXPES.

DOI： 10.1063/5.0245254

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Phonon dispersion of bulk Ge-rich SiGe: inelastic X-ray scattering studies 査読

Koji Usuda, Yuya Oyanagi, Ryo Yokogawa, Hiroshi Uchiyama, Satoshi Tsutsui, Ichiro Yonenaga, Atsushi Ogura

Japanese Journal of Applied Physics 59 ( 6 ) 061003-1 - 061003-6 2020年6月

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記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：IOP Publishing

DOI： 10.35848/1347-4065/ab8e07

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Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si1-xGex using bulk Ge-rich Si1-xGex crystals and oil-immersion Raman spectroscopy 査読

Ryo Yokogawa, Kazuma Takeuchi, Tatsumi Murakami, Koji Usuda, Ichiro Yonenaga, Atsushi Ogura

Japanese Journal of Applied Physics 57 ( 10 ) 106601-1 - 106601-6 2018年10月

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記述言語：英語掲載種別：研究論文（学術雑誌）

DOI： 10.7567/JJAP.57.106601

Web of Science

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Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy 査読

Shotaro Yamamoto, Daisuke Kosemura, S.Norhidayah C.M.Yusoff, Takahiro Kijima, Ryosuke Imai, Kazuma Takeuchi, Ryo Yokogawa, Koji Usuda, Atsushi Ogura

ECS Transactions 64 ( 6 ) 841 - 847 2014年10月

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記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

DOI： 10.1149/06406.0841ecst

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MISC

CVD-SiGe/Si(110)構造における SiGe 層の臨界膜厚のGe濃度依存性

臼田宏治, 伊波希宇, 熊谷直人, 熊谷直人, 入沢寿史, 小椋厚志

応用物理学会春季学術講演会講演予稿集(CD-ROM) 73th 2026年 2025年3月

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担当区分：筆頭著者記述言語：日本語掲載種別：会議報告等

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化学気相成長法によるSi(110)オフ角度基板上SiGe薄膜成長の異方性評価

伊波希宇, 伊波希宇, 臼田宏治, 熊谷直人, 熊谷直人, 入沢寿史, 入沢寿史, 小椋厚志, 小椋厚志

応用物理学会学術講演会講演予稿集(CD-ROM) 86th 2025年

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J-GLOBAL

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ラマン分光法による表面ラフネスが(110)Si基板上SiGeエピ薄膜の歪に及ぼす影響の評価

伊藤佑太, 伊藤佑太, 伊波希宇, 伊波希宇, 臼田宏冶, 小椋厚志, 小椋厚志

応用物理学会学術講演会講演予稿集(CD-ROM) 86th 2025年

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J-GLOBAL

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SiGe/Si(110)構造におけるSiGe薄膜の臨界膜厚評価方法の検討

臼田宏治, 伊波希宇, 伊波希宇, 熊谷直人, 熊谷直人, 入沢寿史, 入沢寿史, 小椋厚志, 小椋厚志

応用物理学会学術講演会講演予稿集(CD-ROM) 86th 2025年

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担当区分：筆頭著者

J-GLOBAL

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