科学技術振興機構   戦略的創造研究推進事業   さきがけ研究者

2014.10 - 2018.3

National Institute for Materials Science   senior researcher

2011.4 - 2018.3

物質・材料研究機構   半導体材料センター半導体デバイス材料開発グループ   主任研究員

2010.4 - 2011.3

University of Carifornia, Santa Barbara   Engineering   guest scientist

2008.7 - 2009.11

National Institute for Materials Science   Researcher

2006.4 - 2010.3

National Institute for Materials Science   postdoctoral researcher

2005.4 - 2006.3

Japan Science Technorogy Agency   CREST   postdoctoral researcher

2003.4 - 2005.3

International Conference on Solid State Devices and Materials (SSDM)   Area8 chair  

2016.1 - 2017.12   

応用物理学会   電子デバイス界面テクノロジー研究会プログラム委員  

2015.4   

応用物理学会   ゲートスタック研究会 ―材料・プロセス・評価の物理―  

2014.4 - 2015.3   

International Conference on Solid State Devices and Materials (SSDM)   Area8 vice chair  

2014.1 - 2015.12   

International Conference on Solid State Devices and Materials (SSDM)   論文委員  

2011.1 - 2017.12   

応用物理学会   Japan Journal of Applied Physics 特集号論文委員  

2011.1 - 2017.12   

Analysis of Iodide Transport on Methyl Ammonium Lead Iodide Perovskite Solar Cell Structure Through Operando Hard X-ray Photoelectron Spectroscopy

Ibrahima Gueye, Yasuhiro Shirai, Takahiro Nagata, Takashi Tsuchiya, Dhruba B. Khadka, Masatoshi Yanagida, Okkyun Seo, Kenjiro Miyano, Osami Sakata

Chemistry of Materials   35 ( 5 )   1948 - 1960   2023.2

Role of Interface Reaction Layer between Ferroelectric Hfxzr1−Xo2 Thin Film and Tin Electrode on Endurance Properties

Takashi Onaya, Toshihide Nabatame, Takahiro Nagata, Kazuhito Tsukagoshi, Jiyoung Kim, Chang-Yong Nam, Esther H. R. Tsai, Koji Kita

2023

Thermodynamic Interpretation of the Meyer-Neldel Rule Explains Temperature Dependence of Ion Diffusion in Silicate Glass

N. Takamure, X. Sun, T. Nagata, A. Ho-Baillie, N. Fukata, D. R. McKenzie

Physical Review Letters   129 ( 17 )   2022.10

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita

ACS Applied Electronic Materials   4 ( 9 )   4719 - 4723   2022.9

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Liwen Sang, Toyohiro Chikyow

ACS Omega   7 ( 23 )   19380 - 19387   2022.6

Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Shigenori Ueda, Jun Chen, Kota Tatejima, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata

Japanese Journal of Applied Physics   61 ( SC )   2022.5

Operando hard X-ray photoelectron spectroscopy study of buried interface chemistry of Au/InO1.16C0.04/Al2O3/p<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e385" altimg="si20.svg"><mml:msup><mml:mrow /><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:math>-Si stacks

Ibrahima Gueye, Riku Kobayashi, Shigenori Ueda, Toshihide Nabatame, Kazuhito Tsukagoshi, Atsushi Ogura, Takahiro Nagata

Applied Surface Science   593   153272 - 153272   2022.4

The electrical conductivity of cubic (In<inf>1- x </inf>Ga<inf>x </inf>)<inf>2</inf>O<inf>3</inf>films ( x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer

Alexandra Papadogianni, Takahiro Nagata, Oliver Bierwagen

Japanese Journal of Applied Physics   61 ( 4 )   2022.4

Molecular beam epitaxy of single-crystalline bixbyite (In1-x Gax)2 O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

Alexandra Papadogianni, Charlotte Wouters, Robert Schewski, Johannes Feldl, Jonas Lähnemann, Takahiro Nagata, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen

Physical Review Materials   6 ( 3 )   2022.3

Combinatorial Synthesis and Interface Analysis for Development of High Dielectric Constant Thin Films

Takahiro Nagata, Somu Kumaragurubaran, Kenichiro Takahashi, Sung Gi Ri, Toyohiro Chikyow

ECS Transactions   108 ( 2 )   61 - 68   2022

Erratum: Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN (ACS Appl. Electron. Mater. (2022) 4 : 9 (4719−4723) DOI: 10.1021/acsaelm.2c00912)

Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita

ACS Applied Electronic Materials   4 ( 10 )   5087 - 4723   2022

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)<inf>2</inf>O<inf>3</inf> alloy films

Johannes Feldl, Martin Feneberg, Alexandra Papadogianni, Jonas Lähnemann, Takahiro Nagata, Oliver Bierwagen, Rüdiger Goldhahn, Manfred Ramsteiner

Applied Physics Letters   119 ( 4 )   2021.7

Evidence-based recommender system for high-entropy alloys

Minh Quyet Ha, Duong Nguyen Nguyen, Viet Cuong Nguyen, Takahiro Nagata, Toyohiro Chikyow, Hiori Kino, Takashi Miyake, Thierry Denœux, Van Nam Huynh, Hieu Chi Dam

Nature Computational Science   1 ( 7 )   470 - 478   2021.7

Effects of Zn x Mn1−x S buffer layer on nonpolar AlN growth on Si (100) substrate

Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata

Japanese Journal of Applied Physics   60 ( SC )   2021.6

Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate

Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Liwen Sang, Toyohiro Chikyow

Japanese Journal of Applied Physics   60 ( SC )   2021.6

Accelerating two-dimensional X-ray diffraction measurement and analysis with density-based clustering for thin films

Akihiro Yamashita, Takahiro Nagata, Shinjiro Yagyu, Toru Asahi, Toyohiro Chikyow

Japanese Journal of Applied Physics   60   2021.6

Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress

Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura

Japanese Journal of Applied Physics   60 ( SC )   2021.6

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf<inf>x</inf>Zr<inf>1-x</inf>O<inf>2</inf>thin films using synchrotron x-ray analysis

Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang Yong Nam, Esther H.R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura

APL Materials   9 ( 3 )   2021.3

Comparison of characteristics of thin film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3

Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro NAGATA, Kazuhito TSUKAGOSHI, Atsushi Ogura

Japanese Journal of Applied Physics   60 ( 3 )   2021.1

Combinatorial Synthesis Applied to the Development of Thin Film Materials for Nanoelectronics

Takahiro Nagata, Toyohiro Chikyow

Functional Thin Films Technology   1 - 20   2021.1

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Melanie Budde, Piero Mazzolini, Johannes Feldl, Christian Golz, Takahiro Nagata, Shigenori Ueda, Georg Hoffmann, Fariba Hatami, W. Ted Masselink, Manfred Ramsteiner, Oliver Bierwagen

Physical Review Materials   4 ( 12 )   2020.12

Exploring the First High-Entropy Thin Film Libraries: Composition Spread-Controlled Crystalline Structure

Thi Xuyen Nguyen, Yen Hsun Su, Jason Hattrick-Simpers, Howie Joress, Takahiro Nagata, Kao Shuo Chang, Suchismita Sarker, Apurva Mehta, Jyh Ming Ting

ACS Combinatorial Science   22 ( 12 )   858 - 866   2020.12

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura

APPLIED PHYSICS LETTERS   117 ( 23 )   2020.12

Valence Band Modification of a (Ga<inf>x</inf>In<inf>1-x</inf>)<inf>2</inf>O<inf>3</inf>Solid Solution System Fabricated by Combinatorial Synthesis

Takahiro Nagata, Takeshi Hoga, Akihiro Yamashita, Toru Asahi, Shinjiro Yagyu, Toyohiro Chikyow

ACS Combinatorial Science   22 ( 9 )   433 - 439   2020.9

Dual-Heteroatom-Doped Reduced Graphene Oxide Sheets Conjoined CoNi-Based Carbide and Sulfide Nanoparticles for Efficient Oxygen Evolution Reaction. International journal

Mohamed Barakat Zakaria, Dehua Zheng, Ulf-Peter Apfel, Takahiro Nagata, El-Refaie S Kenawy, Jianjian Lin

ACS applied materials & interfaces   12 ( 36 )   40186 - 40193   2020.9

Band alignment at non-polar AlN/MnS interface investigated by hard X-ray photoelectron spectroscopy Reviewed

Kazunori Kurishima, Kota Tatejima, Yoshiyuki Yamashita, Shigenori Ueda, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow, Takahiro Nagata

Japanese Journal of Applied Physics   59 ( SI )   2020.6

Development of New High-Dielectric Constant Thin Films By Combinatorial Synthesis

Takahiro Nagata

ECS Transactions   97 ( 1 )   61 - 66   2020.4

Improvement of ferroelectricity and fatigue property of thicker HfxZr1−xO2/ZrO2 bi-layer

T. Onaya, T. Nabatame, M. Inoue, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, N. Sawamoto, T. Nagata, J. Kim, A. Ogura

ECS Transactions   98 ( 3 )   63 - 70   2020

Photoelectron spectroscopic study on electronic state of corundum In<inf>2</inf>O<inf>3</inf> epitaxial thin film grown by mist-CVD

Takahiro Nagata, Tomohiro Yamaguchi, Shigenori Ueda, Wei Yi, Jun Chen, Takuya Kobayashi, Hirokazu Yokoo, Tohru Honda, Yoshiyuki Yamashita, Toyohiro Chikyow

Japanese Journal of Applied Physics   59 ( SI )   2020

Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO<inf>3</inf> single crystal

Yasuhara, Y., Kurishima, K., Chikyow, T., Ogura, A., Nagata, T.

Japanese Journal of Applied Physics   59 ( SI )   2020

Gold nanoparticles anchored on mesoporous zirconia thin films for efficient catalytic oxidation of carbon monoxide at low temperatures

Mohamed Barakat Zakaria, Victor Malgras, Takahiro Nagata, Jeonghun Kim, Yoshio Bando, Amanullah Fatehmulla, Abdullah M. Aldhafiri, W. Aslam Farooq, Yohei Jikihara, Tsuruo Nakayama, Yusuke Yamauchi, Jianjian Lin

Microporous and Mesoporous Materials   288   2019.11

Photoelectroscopic Study of Mn Barrier Layer on SiO<inf>2</inf> for Si Wafer Bonding Process

Takahiro Nagata, Kazumichi Tsumura, Kenro Nakamura, Kengo Uchida, Jin Kawakita, Toyohiro Chikyow, Kazuyuki Higashi

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019   2019.10

Mesostructured HfO2/Al2O3 Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices

Mohamed Barakat Zakaria, Takahiro Nagata, Toyohiro Chikyow

ACS OMEGA   4 ( 12 )   14680 - 14687   2019.9

Molecular magnetic thin films made from Ni-Co Prussian blue analogue anchored on silicon wafers

Mohamed B. Zakaria, Alexei A. Belik, Takahiro Nagata, Toshiaki Takei, Satoshi Tominaka, Toyohiro Chikyow

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS   486   2019.9

Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals Reviewed

Nagata Takahiro, Bierwagen Oliver, Galazka Zbigniew, Ueda Shigenori, Imura Masataka, Yamashita Yoshiyuki, Chikyow Toyohiro

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( 8 )   2019.8

Spectroscopic observation of the interface states at the SiO<inf>2</inf>/4H-SiC(0001) interface

Yoshiyuki Yamashita, Takahiro Nagata, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe

e-Journal of Surface Science and Nanotechnology   17   56 - 60   2019.7

Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 Reviewed

Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura

ECS Transactions   92 ( 3 )   3 - 13   2019.7

Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal Reviewed

Nagata Takahiro, Bierwagen Oliver, Galazka Zbigniew, Imura Masataka, Ueda Shigenori, Yamashita Yoshiyuki, Chikyow Toyohiro

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( SD )   2019.6

Effects of substrate self-bias and nitrogen flow rate on non-polar AlN film growth by reactive sputtering Reviewed

Tatejima Kota, Nagata Takahiro, Ishibashi Keiji, Takahashi Kenichiro, Suzuki Setsu, Ogura Atsushi, Chikyow Toyohiro

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( SD )   2019.6

Effect of N plasma treatment in Cu/SiO hybrid bonding using ultra-thin manganese film

Kazumichi Tsumura, Kengo Uchida, Kenro Nakamura, Takahiro Nagata, Kazuyuki Higashi, Akihiro Kojima, Hideki Shibata

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   12   2019.5

Crystal growth of a MnS buffer layer for non-polar AIN on Si (100) deposited by radio frequency magnetron sputtering Reviewed

Tatejima Kota, Nagata Takahiro, Ishibashi Keiji, Takahashi Kenichiro, Suzuki Setsu, Ogura Atsushi, Chikyow Toyohiro

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( SB )   2019.4

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface Reviewed

Indari Efi Dwi, Yamashita Yoshiyuki, Hasunuma Ryu, Nagata Takahiro, Ueda Shigenori, Yamabe Kikuo

AIP ADVANCES   9 ( 4 )   2019.4

Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress Reviewed

K.Kurishima, T.Nabatame, T.Onaya, K.Tsukagoshi, A.Ohi, N.Ikeda, T.Nagata, A.Ogura

2019 Electron Devices Technology and Manufacturing Conference (EDTM)   74 - 76   2019.3

Improvement in ferroelectricity of Hf<inf>x</inf>Zr<inf>1-x</inf>O<inf>2</inf> thin films using top- and bottom-ZrO<inf>2</inf> nucleation layers Reviewed

Onaya, T., Nabatame, T., Sawamoto, N., Ohi, A., Ikeda, N., Nagata, T., Ogura, A.

APL Materials   7 ( 6 )   2019

Ferroelectricity of Hf<inf>x</inf>Zr<inf>1−x</inf>O<inf>2</inf> thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition Reviewed

Onaya, T., Nabatame, T., Sawamoto, N., Ohi, A., Ikeda, N., Nagata, T., Ogura, A.

Microelectronic Engineering   215   2019

Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis Reviewed

Takahiro Nagata, Yoshihisa Suzuki, Yoshiyuki Yamashita, Atsushi Ogura, Toyohiro Chikyow

Japanese Journal of Applied Physics   57 ( 4 )   2018.4

Solid State Devices and Materials FOREWORD Reviewed

Kageshima Hiroyuki, Hosoi Takuji, Iwamoto Satoshi, Arie Takayuki, Fujino Masahisa, Fukuzaki Yuzo, Harada Syunta, Ikegami Masashi, Iwamuro Noriyuki, Johguchi Koh, Kakushima Kuniyuki, Kanaya Haruichi, Kikuchi Akihiko, Kinoshita Kentaro, Kuroda Rihito, Kurokawa Yasuyoshi, Maehashi Kenzo, Maekawa Keiichi, Makino Toshiharu, Matsushima Toshinori, Miyata Toshitaka, Morioka Hiroshi, Morioka Hiroshi, Murugesan Mariappan, Nagashio Kosuke, Nagata Takahiro, Nakatsuka Osamu, Nishiyama Nobuhiko, Oiwa Akira, Okada Hiroyuki, Ono Teruo, Sakamoto Toshitsugu, Sakata Toshiya, Shirao Mizuki, Sukegawa Kazuo, Suzuki Toshikazu, Suzuki Hidetoshi, Taima Tetsuya, Tanaka Tetsu, Tatsuoka Kohichi, Tawara Takehiko, Tsuda Kunio, Yamamoto Kazuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 4 )   2018.4

Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam

荻原俊弥, 長田貴弘, 吉川英樹

Journal of Surface Analysis   24 ( 3 )   192‐205   2018.3

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy Reviewed

Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, Anli Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi

Journal of Applied Physics   123 ( 9 )   2018.3

Chemical Synthesis of Multilayered Nanostructured Perovskite Thin Films with Dielectric Features for Electric Capacitors Reviewed

Mohamed Barakat Zakaria, Takahiro Nagata, Asahiko Matsuda, Yudai Yasuhara, Atsushi Ogura, Md. Shahriar A. Hossain, Motasim Billah, Yusuke Yamauchi, Toyohiro Chikyow

ACS APPLIED NANO MATERIALS   1 ( 2 )   915 - 921   2018.2

Ferroelectricity of Hf <inf>x</inf> Zr <inf>1-x</inf> O <inf>2</inf> thin films fabricated using TiN stressor and ZrO <inf>2</inf> nucleation techniques

T. Onaya, T. Nabatame, N. Sawamoto, K. Kurishima, A. Ohi, N. Ikeda, T. Nagata, A. Ogura

ECS Transactions   86 ( 6 )   31 - 38   2018.1

Reliability of Al2O3/In-Si-O-C Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress Reviewed

Kurishima Kazunori, Nabatame Toshihide, Onaya Takashi, Tsukagoshi Kazuhito, Ohi Akihiko, Ikeda Naoki, Nagata Takahiro, Ogura Atsushi

ECS Transactions   86 ( 11 )   135 - 145   2018

Ferroelectric-assisted gold nanoparticles array for centimeter-scale highly reproducible SERS substrates Reviewed

Xiaoyan Liu, Minoru Osada, Kenji Kitamura, Takahiro Nagata, Donghui Si

SCIENTIFIC REPORTS   7   2017.6

Effect of Y and Mn doping into rutile type TiO2/Ge stack structure by combinatorial synthesis Reviewed

Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 6 )   2017.6

Crystallographic polarity effect of ZnO on thin film growth of pentacene Reviewed

Tatsuru Nakamura, Takahiro Nagata, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, Yutaka Wakayama

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 4 )   2017.4

Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy Reviewed

Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, Anli Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi

JOURNAL OF APPLIED PHYSICS   121 ( 9 )   2017.3

Photoelectron spectroscopic study on monolayer pentacene thin-film/polar ZnO single-crystal hybrid interface Reviewed

Takahiro Nagata, Tatsuru Nakamura, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, Yutaka Wakayama

APPLIED PHYSICS EXPRESS   10 ( 2 )   2017.2

Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals Reviewed

Takahiro Nagata, Oliver Bierwagen, Zbigniew Galazka, Masataka Imura, Shigenori Ueda, Hideki Yoshikawa, Yoshiyuki Yamashita, Toyohiro Chikyow

APPLIED PHYSICS EXPRESS   10 ( 1 )   2017.1

Direct Observation of the Energy Distribution of Interface States at SiO2/4H-SiC Interface: Operando Hard X-ray Photoelectron Spectroscopic Study

山下良之, 蓮沼隆, 長田貴弘, 知京豊祐

表面科学   38 ( 7 )   347‐350(J‐STAGE) - 350   2017

Contacting ZnO Individual Crystal Facets by Direct Write Lithography Reviewed

Nikolay Petkov, Janos Volk, Robert Erdelyi, Istvan Endre Lukacs, Takahiro Nagata, Chris Sturm, M. Grundmann

ACS APPLIED MATERIALS & INTERFACES   8 ( 36 )   23891 - 23898   2016.9

Bottom-electrode effect on switching behavior and interface reaction in nanoionic-based resistive changing memory Reviewed

Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 8 )   2016.8

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor Reviewed

Takahiro Nagata, Somu Kumaragurubaran, Yoshifumi Tsunekawa, Yoshiyuki Yamashita, Shigenori Ueda, Kenichiro Takahashi, Sung-Gi Ri, Setsu Suzuki, Seungjun Oh, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 6 )   2016.6

Thin-film growth of (110) rutile TiO2 on (100) Ge substrate by pulsed laser deposition Reviewed

Yoshihisa Suzuki, Takahiro Nagata, Yoshiyuki Yamashita, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 6 )   2016.6

Screening charge localization at LiNbO3 surface with Schottky junction Reviewed

Takahiro Nagata, Toyohiro Chikyow, Kenji Kitamura

APPLIED PHYSICS LETTERS   108 ( 17 )   2016.4

Interfacial charge transfer behavior of conducting polymers as contact electrode for semiconductor devices Reviewed

Jin Kawakita, Yuki Fujikawa, Takahiro Nagata, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016.4

Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods Reviewed

Kentaro Watanabe, Takahiro Nagata, Seungjun Oh, Yutaka Wakayama, Takashi Sekiguchi, Janos Volk, Yoshiaki Nakamura

NATURE COMMUNICATIONS   7   2016.2

Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface Reviewed

Y. Yamashita, R. Hasunuma, T. Nagata, T. Chikyow

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6   75 ( 12 )   207 - 211   2016

Hard X-ray photoelectron spectroscopic study on high-k dielectrics based resistic random access memory Reviewed

T. Nagata, Y. Yamashita, H. Yoshikawa, T. Chikyow

ECS Transactions   75 ( 32 )   39 - 47   2016

Energy distribution of interface states at SiO2/SiC interface obtained from operando photoelectron spectroscopy

Yamashita Yoshiyuki, Hasunuma Ryo, Nagata Takahiro, Chikyo Toyohiro

Abstract of annual meeting of the Surface Science of Japan   36   406 - 406   2016

強誘電体分極・表面電荷を用いたπ電子材料の機能制御と電界効果素子の開発

長田貴弘, 北村健二

村田学術振興財団年報   ( 29-2 )   266‐273   2015.12

Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor Reviewed

Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung-Gi Ri, Setsu Suzuki, Toyohiro Chikyow

THIN SOLID FILMS   592   29 - 33   2015.10

Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition Reviewed

Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow

THIN SOLID FILMS   591   105 - 110   2015.9

Altering properties of cerium oxide thin films by Rh doping Reviewed

Klara Sevcikova, Vaclav Nehasil, Mykhailo Vorokhta, Stanislav Haviar, Vladimir Matolin, Iva Matolinova, Karel Masek, Igor Pis, Keisuke Kobayashi, Masaaki Kobata, Takahiro Nagata, Yoshitaka Matsushita, Hideki Yoshikawa

MATERIALS RESEARCH BULLETIN   67   5 - 13   2015.7

Heteroepitaxial growth of nonpolar Cu-doped ZnO thin film on MnS-buffered (100) Si substrate Reviewed

Tatsuru Nakamura, Nam Nguyen, Takahiro Nagata, Kenichiro Takahashi, Sung-Gi Ri, Keiji Ishibashi, Setsu Suzuki, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 6 )   2015.6

Combinatorial synthesis of BaTiO3-Bi( Mg2/3Nb1/3)O-3 thin-films for high-temperature capacitors Reviewed

Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung-Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 6 )   2015.6

Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy Reviewed

Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 6 )   2015.6

Combinatorial synthesis of BaTiO

Kumaragurubaran Somu, Nagata Takahiro, Takahashi Kenichiro, Ri Sung-Gi, Tsunekawa Yoshifumi, Suzuki Setsu, Chikyow Toyohiro

Jpn. J. Appl. Phys.   54 ( 6 )   06FJ02   2015.4

BaTiO3 based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors Reviewed

Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung-Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 4 )   2015.4

Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope-Cathodoluminescence Nanospectroscopy Reviewed

Kentaro Watanabe, Takahiro Nagata, Yutaka Wakayama, Takashi Sekiguchi, Robert Erdelyi, Janos Volk

ACS NANO   9 ( 3 )   2989 - 3001   2015.3

BaTiO

Kumaragurubaran Somu, Nagata Takahiro, Takahashi Kenichiro, Ri Sung-Gi, Tsunekawa Yoshifumi, Suzuki Setsu, Chikyow Toyohiro

Jpn. J. Appl. Phys.   54 ( 4 )   04DH02   2015.1

Resolving lateral and vertical structures by ellipsometry using wavelength range scan Reviewed

P. Petrik, E. Agocs, J. Volk, I. Lukacs, B. Fodor, P. Kozma, T. Lohner, S. Oh, Y. Wakayama, T. Nagata, M. Fried

THIN SOLID FILMS   571   579 - 583   2014.11

Influence of the substrate choice on the L10 phase formation of post-annealed Pt/Fe and Pt/Ag/Fe thin films Reviewed

I. A. Vladymyrskyi, M. V. Karpets, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, F. Ganss, G. Beddies, M. Albrecht, I. M. Makogon

Journal of Applied Physics   116 ( 4 )   2014.7

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition Reviewed

Zs. Baji, Z. Lábadi, Gy. Molnár, B. Pécz, K. Vad, Z. E. Horváth, P. J. Szabó, T. Nagata, J. Volk

Thin Solid Films   562   485 - 489   2014.7

Epitaxial growth of nonpolar ZnO and n-ZnO/i-ZnO/p-GaN heterostructure on Si(001) for ultraviolet light emitting diodes Reviewed

Nam T. Nguyen, Sung-Gi Ri, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

APPLIED PHYSICS EXPRESS   7 ( 6 )   2014.6

ルチル型TiO₂界面層を用いたHfO₂/Ge界面構造制御

小橋和義, 長田貴弘, 生田目俊秀, 山下良之, 小椋厚志, 知京豊裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.18P-D8-4   2014.3

Photoelectron spectroscopic study on band alignment of poly(3-hexylthiophene-2,5-diyl)/polar-ZnO heterointerface Reviewed

Takahiro Nagata, Seungjun Oh, Yoshiyuki Yamashita, Hideki Yoshikawa, Norihiro Ikeno, Keisuke Kobayashi, Toyohiro Chikyow, Yutaka Wakayama

THIN SOLID FILMS   554   194 - 198   2014.3

Photoelectron Spectroscopic Study on High-k Dielectrics Based Nanoionics-Type ReRAM Structure under Bias Operation Reviewed

T. Nagata, Y. Yamashita, H. Yoshikawa, K. Kobayashi, T. Chikyow

DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING   61 ( 2 )   301 - 310   2014

Tunable and highly reproducible surface-enhanced Raman scattering substrates made from large-scale nanoparticle arrays based on periodically poled LiNbO3 templates Reviewed

Xiaoyan Liu, Kenji Kitamura, Qiuming Yu, Jiajie Xu, Minoru Osada, Nagata Takahiro, Jiangyu Li, Guozhong Cao

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   14 ( 5 )   2013.10

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

M. Imura, S. Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi

APPLIED PHYSICS LETTERS   103 ( 16 )   2013.10

Influence of the annealing atmosphere on the structural properties of FePt thin films Reviewed

I. A. Vladymyrskyi, M. V. Karpets, F. Ganss, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, G. Beddies, M. Albrecht, Iu. M. Makogon

JOURNAL OF APPLIED PHYSICS   114 ( 16 )   2013.10

Combinatorial synthesis of Cu/(TaxNb1-x) 2O5 stack structure for nanoionics-type ReRAM device Reviewed

Takahiro Nagata, Masamitsu Haemori, Toyohiro Chikyow

ACS Combinatorial Science   15 ( 8 )   435 - 438   2013.8

Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap Reviewed

Kazuyoshi Kobashi, Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame, Toyohiro Chikyow

JOURNAL OF APPLIED PHYSICS   114 ( 1 )   2013.7

Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy Reviewed

Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Hiroyuki Takeda, Meiyong Liao, AnLi Yang, Yoshiyuki Yamashita, Hideki Yoshikawa, Yasuo Koide, Keisuke Kobayashi, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Tsutomu Araki, Yasushi Nanishi

JOURNAL OF APPLIED PHYSICS   114 ( 3 )   2013.7

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories Reviewed

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow, Keisaku Yamada, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi

Physical Review B   87 ( 15 )   2013.4

Improving the performance of inorganic-organic hybrid photovoltaic devices by uniform ordering of ZnO nanorods and near-atmospheric pressure nitrogen plasma treatment Reviewed

Seungjun Oh, Takahiro Nagata, Janos Volk, Yutaka Wakayama

JOURNAL OF APPLIED PHYSICS   113 ( 8 )   2013.2

Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure Reviewed

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, N. Ikeno, K. Kobayashi, T. Chikyow, Y. Wakayama

APPLIED PHYSICS LETTERS   102 ( 4 )   2013.1

Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface Reviewed

Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Tsuyoshi Uehara, Masamitsu Haemori, Keisuke Kobayashi, Toyohiro Chikyow

JOURNAL OF APPLIED PHYSICS   112 ( 11 )   2012.12

Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface Reviewed

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama

APPLIED PHYSICS LETTERS   101 ( 17 )   2012.10

Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface (vol 27, pg 2232, 2012) Reviewed

Oliver Bierwagen, Takahiro Nagata, Mark E. White, Min-Ying Tsai, James S. Speck

JOURNAL OF MATERIALS RESEARCH   27 ( 19 )   2578 - 2578   2012.10

Nanoimprint for Fabrication of Highly Ordered Epitaxial ZnO Nanorods on Transparent Conductive Oxide Films Reviewed

Seungjun Oh, Takahiro Nagata, Janos Volk, Yutaka Wakayama

APPLIED PHYSICS EXPRESS   5 ( 9 )   2012.9

Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface Reviewed

Oliver Bierwagen, Takahiro Nagata, Mark E. White, Min-Ying Tsai, James S. Speck

JOURNAL OF MATERIALS RESEARCH   27 ( 17 )   2232 - 2236   2012.9

Development of AlN/diamond heterojunction field effect transistors Reviewed

Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano

DIAMOND AND RELATED MATERIALS   24   206 - 209   2012.4

Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation Reviewed

Takahiro Nagata, Masamitsu Haemori, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi, Toyohiro Chikyow

JOURNAL OF MATERIALS RESEARCH   27 ( 6 )   869 - 878   2012.3

Electrical properties and stability of an epitaxial alumina film formed on Cu-9 at. % Al(111) Reviewed

Michiko Yoshitake, Takahiro Nagata, Weijie Song

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   30 ( 2 )   2012.2

Hard X-ray photoemission spectroscopy on band alignment at PEDOT:PSS/ZnO interface Reviewed

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama

Appl. Phys. Lett.   101   173303-1-4 - 173303-1-4   2012

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure Reviewed

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

APPLIED PHYSICS LETTERS   99 ( 22 )   2011.11

XPS and UPS study on band alignment at Pt-Zn-terminated ZnO(0001) interface Reviewed

Petr Blumentrit, Michiko Yoshitake, Slavomir Nemsak, Taeyoung Kim, Takahiro Nagata

APPLIED SURFACE SCIENCE   258 ( 2 )   780 - 785   2011.11

Bias-application in Hard X-ray Photoelectronic Study for Advanced Materials

YAMASHITA Yoshiyuki, NAGATA Takahiro, YOSHIKAWA Hideki, CHIKYOW Toyohiro, KOBAYASHI Keisuke

Hyomen Kagaku   32 ( 6 )   320 - 324   2011.6

XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films Reviewed

T. Nagata, O. Bierwagen, M. E. White, M. Y. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, J. S. Speck

APPLIED PHYSICS LETTERS   98 ( 23 )   2011.6

Investigations into the Impact of the Template Layer on ZnO Nanowire Arrays Made Using Low Temperature Wet Chemical Growth Reviewed

Robert Erdelyi, Takahiro Nagata, David J. Rogers, Ferechteh H. Teherani, Zsolt E. Horvath, Zoltan Labadi, Zsofia Baji, Yutaka Wakayama, Janos Volk

CRYSTAL GROWTH & DESIGN   11 ( 6 )   2515 - 2519   2011.6

Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment Reviewed

Oliver Bierwagen, James S. Speck, Takahiro Nagata, Toyohiro Chikyow, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi

APPLIED PHYSICS LETTERS   98 ( 17 )   2011.4

Effect of UV-ozone treatment on electrical properties of PEDOT:PSS film Reviewed

Takahiro Nagata, Seungjun Oha, Toyohiro Chikyow, Yutaka Wakayama

ORGANIC ELECTRONICS   12 ( 2 )   279 - 284   2011.2

傾斜機能材料の開発と新展開 コンビナトリアル手法を用いたナノエレクトロニクス材料における合金薄膜材料開発

長田貴弘, 知京豊裕

金属   81 ( 1 )   32 - 37   2011.1

コンビナトリアル手法を用いたナノエレクトロニクス材料における合金薄膜材料開発 (特集 傾斜機能材料の開発と新展開)

長田 貴弘, 知京 豊裕

金属   81 ( 1 )   32 - 37   2011.1

The effect of seed layer crystallinity on the ordered growth of vertically aligned ZnO nanowire arrays Reviewed

R?bert Erd?lyi, Takahiro Nagata, David J. Rogers, Ferechteh Hosseini Teherani, Zolt?n L?badi, Yutaka Wakayama, J?nos Volk

Crystal Growth and Design   11   2515 - 2519   2011

New Phases of sp(3)-bonded Boron Nitride Prepared by Photo-Assisted Plasma Processing Methods: The Fundamentals and Applications to Electronic Devices Reviewed

Shojiro Komatsu, Kazuaki Kobayashi, Takahiro Nagata, Toyohiro Chikyo

INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011)   1393   2011

XPS study on band alignment at Pt-O-terminated ZnO(000(1)over-bar) interface Reviewed

Taeyoung Kim, Michiko Yoshitake, Shinjiro Yagyu, Slavomir Nemsak, Takahiro Nagata, Toyohiro Chikyow

SURFACE AND INTERFACE ANALYSIS   42 ( 10-11 )   1528 - 1531   2010.10

Oxygen migration at Pt/HfO2/Pt interface under bias operation Reviewed

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

APPLIED PHYSICS LETTERS   97 ( 8 )   2010.8

Photoinduced Phase Transformations in Boron Nitride: New Polytypic Forms of sp(3)-Bonded (6H-and 30H-) BN Reviewed

Shojiro Komatsu, Kazuaki Kobayashi, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto

JOURNAL OF PHYSICAL CHEMISTRY C   114 ( 31 )   13176 - 13186   2010.8

Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal n-ZnO Reviewed

T. Nagata, J. Volk, M. Haemori, Y. Yamashita, H. Yoshikawa, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow

JOURNAL OF APPLIED PHYSICS   107 ( 10 )   2010.5

Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films Reviewed

Takahiro Nagata, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, James S. Speck

JOURNAL OF APPLIED PHYSICS   107 ( 3 )   2010.2

Sp(3)-bonded new phases of BN; their growth by laser-plasma synchronous processing and applications Reviewed

Shojiro Komastu, Kazuaki Kobayashi, Takahiro Nagata, Toyohiro Chikyo

TENCON 2010: 2010 IEEE REGION 10 CONFERENCE   993 - 997   2010

P-type sp(3)-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method Reviewed

Shojiro Komatsu, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Kazunori Koga, Atsushi Yamamoto, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto, Masaharu Shiratani

JOURNAL OF PHYSICS D-APPLIED PHYSICS   42 ( 22 )   2009.11

Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO2 (110) and (101) Thin Films Reviewed

Oliver Bierwagen, Mark E. White, Min-Ying Tsai, Takahiro Nagata, James S. Speck

APPLIED PHYSICS EXPRESS   2 ( 10 )   2009.10

Surface structure and chemical states of a-plane and c-plane InN films Reviewed

Takahiro Nagata, Gregor Koblmueller, Oliver Bierwagen, Chad S. Gallinat, James S. Speck

APPLIED PHYSICS LETTERS   95 ( 13 )   2009.9

Highly uniform epitaxial ZnO nanorod arrays for nanopiezotronics Reviewed

J. Volk, T. Nagata, R. Erdélyi, I. Bársony, A. L. Tóth, I. E. Lukács, Zs. Czigány, H. Tomimoto, Y. Shingaya, T. Chikyow

Nanoscale Research Letters   4 ( 7 )   699 - 704   2009.7

Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene Reviewed

Takuma Yo, Hideaki Tanaka, Takahiro Nagata, Naoki Fukata, Toyohiro Chikyow, Akira Sakai, Junichi Yanagisawa

JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 6 )   2009.6

Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion Reviewed

Masamitsu Haemori, Takahiro Nagata, Toyohiro Chikyow

APPLIED PHYSICS EXPRESS   2 ( 6 )   2009.6

Interface structure and the chemical states of Pt film on polar-ZnO single crystal Reviewed

T. Nagata, J. Volk, Y. Yamashita, H. Yoshikawa, M. Haemori, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow

APPLIED PHYSICS LETTERS   94 ( 22 )   2009.6

Surface Nitridation of c-Plane Sapphire Substrate by Near-Atmospheric Nitrogen Plasma Reviewed

Takahiro Nagata, Masamitsu Haemori, Junichiro Anzai, Tsuyoshi Uehara, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 4 )   2009.4

Prediction of iodide adsorption on oxides by surface complexation modeling with spectroscopic confirmation Reviewed

Takahiro Nagata, Keisuke Fukushi, Yoshio Takahashi

JOURNAL OF COLLOID AND INTERFACE SCIENCE   332 ( 2 )   309 - 316   2009.4

Electronic structure analysis of silicon nanowires for high conductivity in n- and p-channel nanowire-FET Reviewed

Yeonghun Lee, Takahiro Nagata, Kuniyuki Kakushima, Kenji Shiraishi, Hiroshi Iwai

ECS Transactions   16 ( 40 )   1 - 5   2009

Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth Reviewed

T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai, T. Uehara

Journal of Applied Physics   105 ( 6 )   2009

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films Reviewed

T. Nagata, M. Haemori, T. Chikyow

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   27 ( 3 )   492 - 495   2009

Effect of Annealing on Implanted Ga of Diamond-Like Carbon Thin Films Fabricated by Focused-Ion-Beam Chemical Vapor Deposition Reviewed

Takahiro Nagata, Yoshiki Sakuma, Masamitsu Haemori, Kiyomi Nakajima, Reo Kometani, Kazuhiro Kanda, Shinji Matsui, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 12 )   9010 - 9012   2008.12

Annealing Effect of Deposited Materials formed byFocused Au Ion Beam-induced Chemical Vapor Deposition using Phenanthrene Reviewed

T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, J. Yanagisawa

Digest of Papers 2008 International Microprocess and Nanotechnology Conference   2008.10

Thermal stability of Ni silicide films on heavily doped n(+) and p(+) Si substrates Reviewed

Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

MICROELECTRONIC ENGINEERING   85 ( 7 )   1642 - 1646   2008.7

Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using AuSi alloyed metal source Reviewed

Takuma Yo, Hideaki Tanaka, Kakunen Koreyama, Takahiro Nagata, Yoshiki Sakuma, Kiyomi Nakajima, Toyohiro Chikyow, Junichi Yanagisawa, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 6 )   5018 - 5021   2008.6

Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation Reviewed

J. Volk, A. Hakansson, H. T. Miyazaki, T. Nagata, J. Shimizu, T. Chikyow

APPLIED PHYSICS LETTERS   92 ( 18 )   2008.5

Composition-spread thin films of pentacene and 6,13-pentacenequinone fabricated by using continuous-wave laser molecular beam epitaxy Reviewed

Seiichiro Yaginuma, Kenji Itaka, Yuji Matsumoto, Tsuyoshi Ohnishi, Mikk Lippmaa, Takahiro Nagata, Toyohiro Chikyow, Hideomi Koinuma

APPLIED SURFACE SCIENCE   254 ( 8 )   2336 - 2341   2008.2

Ni silicidation on Heavily Doped Si Substrates Reviewed

Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4   1296 - +   2008

Landscape of combinatorial materials exploration and high throughput characterizations for the post-cmos devices

T. Chikyow, K. Ohmori, T. Nagata, N. Umezawa, M. Haemori, M. Yoshitake, T. Hasegawa, H. Koinuma, K. Yamada

International Symposium on VLSI Technology, Systems, and Applications, Proceedings   66 - 67   2008

Crystal structures of Pt-Ru alloy Schottky contacts on ZnO by combinatorial ion beam deposition Reviewed

Takahiro Nagata, Parhat Ahmet, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 5A )   2907 - 2909   2007.5

GaN film fabrication by near-atmospheric plasma-assisted chemical vapor deposition Reviewed

Takahiro Nagata, Yoshiki Sakuma, Tsuyoshi Uehara, Toyohiro Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 1-3 )   L43 - L45   2007.1

Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source Reviewed

T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyow, J. Yanagisawa, A. Sakai

Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC   150 - 151   2007

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition Reviewed

T. Nagata, P. Ahmet, Y. Z. Yoo, K. Yamada, K. Tsutsui, Y. Wada, T. Chikyow

Applied Surface Science   252 ( 7 )   2503 - 2506   2006.1

Composition spread metal thin film fabrication technique based on ion beam sputter deposition Reviewed

P Ahmet, T Nagata, D Kukuruznyak, S Yagyu, Y Wakayama, M Yoshitake, T Chikyow

APPLIED SURFACE SCIENCE   252 ( 7 )   2472 - 2476   2006.1

Three-dimensional GaN nano-structure fabrication by focused ion beam chemical vapor deposition Reviewed

T. Nagata, P. Ahmet, Y. Yamauchi, Y. Sakuma, T. Sekiguchi, T. Chikyow

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   242 ( 1-2 )   250 - 252   2006.1

Combinatorial fabrication and phase diagramming of ternary composition spreads

Parhat Ahmet, Takahiro Nagata, Dmitry Anatolyevich Kukuruznyak, Kenji Ohmori, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

Proceedings - Electrochemical Society   PV 2006-03   215 - 224   2006

Combinatorial fabrication and characterization of oxide and metal thin film composition spreads

Parhat Ahmet, Takahiro Nagata, Dmitry Anatolyevich Kukuruznyak, Kenji Ohmori, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

ECS Transactions   2 ( 1 )   79 - 90   2006

Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering Reviewed

Atsushi Ashida, Takahiro Nagata, Norifumi Fujimura

Journal of Applied Physics   99 ( 1 )   2006

Effects of single-crystalline GaN target on GaN thin films in pulsed laser deposition process Reviewed

T Nagata, YZ Yoo, P Ahmet, T Chikyow

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 11 )   7896 - 7900   2005.11

Low-temperature growth of GaN microcrystals from position-controlled Ga droplets arrayed by a low-energy focused ion beam system Reviewed

T. Nagata, P. Ahmet, T. Sekiguchi, T. Chikyow

Journal of Crystal Growth   283 ( 3-4 )   328 - 331   2005.10

GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition Reviewed

T Nagata, P Ahmet, Y Sakuma, T Sekiguchi, T Chikyow

APPLIED PHYSICS LETTERS   87 ( 1 )   2005.7

Electro-optic effect in ZnO:Mn thin films Reviewed

T. Nagata, A. Ashida, N. Fujimura, T. Ito

Journal of Alloys and Compounds   371 ( 1-2 )   157 - 159   2004.5

The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering Reviewed

T. Nagata, A. Ashida, N. Fujimura, T. Ito

Journal of Applied Physics   95 ( 8 )   3923 - 3927   2004.4

Optical propagation loss of ZnO films grown on sapphire Reviewed

A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura, T. Ito

Journal of Applied Physics   95 ( 4 )   1673 - 1676   2004.2

Position controlled GaN nano-structures fabricated by low energy focused ion beam system

Takahiro Nagata, Parhat Ahmet, Takashi Koida, Shigefusa F. Chichibu, Toyohiro Chikyow

Materials Research Society Symposium - Proceedings   792   605 - 609   2003

Electro-optic effect in epitaxial ZnO:Mn thin films Reviewed

Takahiro Nagata, Atsushi Ashida, Norifumi Fujimura, Taichiro Ito

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 ( 11 B )   6916 - 6918   2002.11

Electro-optic property of ZnO:X (X = Li,Mg) thin films Reviewed

Takahiro Nagata, Tamaki Shimura, Atsushi Ashida, Norifumi Fujimura, Taichiro Ito

Journal of Crystal Growth   237-239 ( 1-4 I )   533 - 537   2002.4

Ferroelectricity in Li-Doped ZnO:X Thin Films and their Application in Optical Switching Devices

Takahiro Nagata, Tamaki Shimura, Yoshiyuki Nakano, Atsushi Ashida, Norifumi Fujimura, Taichiro Ito

Japanese Journal of Applied Physics   40 ( Part 1, No. 9B )   5615 - 5618   2001.9

太陽電池用CuInSe₂薄膜の機能傾斜化

芦田淳, 長田貴弘, 熊谷倫一, 伊藤太一郎

傾斜機能材料論文集   1999   155 - 158   2000.12

Oriented growth of CuInSe2 thin films by means of Cu2Se interfaces

A. Ashida, T. Nagata, T. Ito

Materials Science Forum   308-311   301 - 306   1999

Suppression of GeO_x with rutile TiO_2 Interlayer between HfO_2 and Ge

Kobashi Kazuyoshi, Nagata Takahiro, Nabatame Toshihide, Yamashita Yoshiyuki, Ogura Atsushi, Chikyow Toyohiro

Technical report of IEICE. SDM   113 ( 87 )   25 - 28   2013.6

極性ZnO基板上におけるペンタセン薄膜の成長モード

中村立, 長田貴弘, 早川竜馬, OH S. J, 廣芝伸哉, 藤村紀文, 知京豊裕, 若山裕, 若山裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.28P-G19-8   2013.3

低温CVD成膜されたSiO₂における水素ラジカル処理の効果

土屋佑樹, 池野成裕, 山口拓也, 鈴木摂, 石橋啓司, 長田貴弘, 新船幸二, 吉田晴彦, 佐藤真一, 知京豊裕, 小椋厚志

応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.12A-F6-5   2012.8

極性を有するZnO基板上のペンタセン薄膜の成長過程

中村立, 長田貴弘, 早川竜馬, OH S. J, 廣芝伸哉, 藤村紀文, 知京豊裕, 若山裕

応用物理学会学術講演会講演予稿集(CD−ROM)   72nd   ROMBUNNO.31A-ZQ-6   2011.8

Zn極性及びO極性ホモエピタキシャルZnO薄膜の表面構造

中村立, 長田貴弘, 芦田淳, 吉村武, 藤村紀文

応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   2011

金属酸化物を用いた原子スイッチ中間層材料の検討 ([日本電子材料技術協会]第44回秋期講演大会--優秀賞受賞論文と受賞者の感想)

南風盛 将光, 長田 貴弘, 知京 豊裕

日本電子材料技術協会会報   39   28 - 30   2008.11

連続発振レーザーMBEによる有機分子組成傾斜薄膜の作製

柳沼誠一郎, 伊高健治, 松本祐司, 大西剛, LIPPMAA Mikk, 長田貴弘, 知京豊裕, 鯉沼秀臣

応用物理学関係連合講演会講演予稿集   54th ( 3 )   1289   2007.3

ナノZrO₂核生成層を用いた強誘電体Hf_xZr_1-xO₂薄膜の作製技術

女屋崇, 女屋崇, 女屋崇, 生田目俊秀, 澤本直美, 大井暁彦, 池田直樹, 長田貴弘, 小椋厚志

応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018.9 

Mgドーピングによる高In組成InGaNの表面‐バルク電子状態変化

井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018.3 

無極性AlN薄膜成長のためのスパッタ法を用いたMnSバッファー層作製条件の検討

立島滉大, 立島滉大, 長田貴弘, 石橋啓次, 高橋健一郎, 鈴木摂, 小椋厚志, 知京豊裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018.3 

GaNテンプレート基板のための反応性スパッタ法を用いたAlNバッファー層作製条件の検討

立島滉大, 立島滉大, 長田貴弘, 石橋啓次, 高橋健一郎, 鈴木摂, 小椋厚志, 知京豊裕

日本電子材料技術協会秋期講演大会講演概要集  2017.11 

Si基板上GaN成長のための反応性スパッタ法を用いたAlNバッファー層作製条件の検討

立島滉大, 立島滉大, 長田貴弘, 石橋啓次, 高橋健一郎, 鈴木摂, 小椋厚志, 知京豊裕

応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017.8 

オペランド光電子分光法によるSiO₂/SiC界面準位のエネルギー分布観測

山下良之, 蓮沼隆, 長田貴弘, 知京豊裕

真空に関する連合講演会講演予稿集  2016.11 

レーザアブレーション法によるGe基板上ルチル型TiO₂薄膜作製条件の最適化

鈴木良尚, 長田貴弘, 山下良之, 生田目俊秀, 小椋厚志, 知京豊裕

日本電子材料技術協会秋期講演大会講演概要集  2016.11 

極低角度入射ビームオージェ深さ方向分析によるHfO₂薄膜/Si基板構造の分析

荻原俊弥, 長田貴弘, 吉川英樹

日本分析化学会年会講演要旨集  2016.8 

PLDによるルチル型TiO₂/Ge作製条件の検討

鈴木良尚, 鈴木良尚, 長田貴弘, 山下良之, 生田目俊秀, 小椋厚志, 知京豊裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2016.3 

マテリアルズインフォマティクスとハイスループット材料合成・計測

知京豊裕, 長田貴弘, 山下良之, 吉武道子, 柳生進二郎, 石橋啓次, 高橋健一郎, 李成奇, 鈴木摂

日本セラミックス協会年会講演予稿集(CD-ROM)  2016.3 

Ge上ルチル型TiO₂層へのアクセプタドープによる絶縁性向上の試み

鈴木良尚, 長田貴弘, 山下良之, PAULSAMY C, 小橋和義, 生田目俊秀, 小椋厚志, 知京豊裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2015.2 

MOCVD法を用いて成長したNドープZnO膜のアニール効果

中浦拓也, 中浦拓也, 原田善之, WANG J, 長田貴弘, 関口隆史, 知京豊裕, 鈴木摂, 石垣隆正, 角谷正友

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2015.2 

半導体ナノワイヤの変形ポテンシャル・弾性限界のその場顕微分光評価

渡辺健太郎, 長田貴弘, 若山裕, 関口隆史, VOLK Janos

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2015.2 

Si基板上非極性ZnO薄膜のエピタキシャル成長とそのLED特性

中村立, NGUYEN Nam T, 長田貴弘, 知京豊裕, 李成奇, 高橋健一郎, 石橋啓次, 鈴木摂

日本電子材料技術協会秋期講演大会講演概要集  2014.11 

マテリアルインフォーマティックスとコンビナトリアル材料合成

知京豊裕, 長田貴弘, 鈴木摂

日本金属学会講演概要(CD-ROM)  2014.9 

硬X線光電子分光法によるIn₂O₃単結晶の電子状態評価

長田貴弘, BIERWAGEN O, GALAZKA Z, 上田茂典, 吉川英樹, 井村将隆, 山下良之, OH S, 坂田修身, 知京豊裕

応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014.9 

溶液成長ZnOナノロッドの成長モード制御による残留ドナー濃度均一化

渡辺健太郎, OH Seungjun, 長田貴弘, 若山裕, 関口隆史, VOLK Janos

応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014.9 

ナノプローブCL法によるZnOナノロッドの曲げ変形とバンドギャップの歪シフトのその場評価

渡辺健太郎, VOLK Janos, OH Seungjun, 長田貴弘, 若山裕, 関口隆史

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2014.3 

ナノエレクトロニクス分野における国際連携の取り組み

知京豊裕, 長田貴弘, 生田目俊秀, 吉武道子, 柳生進二郎, 大毛利健治

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2014.3 

BaTiO₃系酸化物を用いた高誘電体材料の開発と高温デバイスへの応用

クマラグルバラン ソム, 長田貴弘, 知京豊裕, 李成奇, 高橋健一郎, 鈴木摂

日本電子材料技術協会秋期講演大会講演概要集  2013.11 

新しいものは,ちいさい。ナノエレクトロニクスのための新材料・新機能の創製プロジェクト コンビナトリアル手法による価数制御型酸化物抵抗変化メモリ材料の開発

長田貴弘, 知京豊裕

NIMS NOW  2013.9 

溶液成長ZnOナノロッドの成長異方性と電気特性

渡辺健太郎, OH Seungjin, VOLK Janos, 長田貴弘, 若山裕, 関口隆史

応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013.8 

硬X線光電子分光法を用いたMg‐InNのエネルギーバンド分布評価

井村将隆, 津田俊輔, 長田貴弘, 武田寛之, 小出康夫, YANG A.L, 山下良之, 吉川英樹, 小林啓介, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし

応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013.8 

強誘電体結晶のポテンシャル

北村健二, 長田貴弘, 長田実, LIU X

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  2013.8 

HfO₂/Ge界面へのルチル型TiO₂挿入によるGeOx生成の抑制 (シリコン材料・デバイス)

小橋 和義, 長田 貴弘, 生田目 俊秀

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報  2013.6 

Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge

小橋和義, 長田貴弘, 生田目俊秀, 山下良之, 小椋厚志, 知京豊裕

電子情報通信学会技術研究報告  2013.6 

高度に配向されたZnOナノロッドと大気圧窒素プラズマ表面処理の光電変換デバイスへの影響

OH Seungjun, 長田貴弘, VOLK Janos, 若山裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013.3 

ナノスケール機能性酸化物の多様性と次世代デバイスへの期待

知京豊裕, 長田貴弘, 生田目俊英, 山下良之, 関口隆史, JUN Chen, LIU Yongxun, 昌原明植

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013.3 

極性ZnO基板上におけるペンタセン薄膜の成長モード

中村立, 長田貴弘, 早川竜馬, OH S. J, 廣芝伸哉, 藤村紀文, 知京豊裕, 若山裕

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013.3 

極低温ナノプローブCL法によるZnOナノワイヤの光学・電気特性評価

渡辺健太郎, VOLK Janos, OH Seungjin, 長田貴弘, 若山裕, 関口隆史

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013.3 

硬X線光電子分光法を用いたMgドープIn_0.70Ga_0.30Nの表面‐バルク電子状態評価

井村将隆, 津田俊輔, 長田貴弘, 武田寛之, 小出康夫, YANG A.L, 山下良之, 吉川英樹, 小林啓介, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし

応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013.3 

酸化物半導体薄膜表面の電荷蓄積層の評価と制御

長田貴弘, BIERWAGEN O, WHITE M. E, TSAI M.‐Y, 山下良之, 吉川英樹, 大橋直樹, 小林啓介, 知京豊裕, SPECK J. S

エレクトロセラミックス研究討論会講演予稿集  2012.10 

硬X線光電子分光法を用いたInNの表面電子状態評価

井村将隆, 津田俊輔, 長田貴弘, 小出康夫, YANG AnLi, 山下良之, 吉川英樹, 小林啓介, 金子昌充, 山口智広, 上松尚, 荒木努, 名西やすし

応用物理学会学術講演会講演予稿集(CD-ROM)  2012.8 

低温CVD成膜されたSiO₂における水素ラジカル処理の効果

土屋佑樹, 池野成裕, 山口拓也, 鈴木摂, 石橋啓司, 長田貴弘, 新船幸二, 吉田晴彦, 佐藤真一, 知京豊裕, 小椋厚志

応用物理学会学術講演会講演予稿集(CD-ROM)  2012.8 

ナノプローブ・カソードルミネッセンス装置の開発と圧電性ナノ材料の応力印加その場評価への応用

渡辺健太郎, VOLK Janos, OH Seungjin, 長田貴弘, 若山裕, 関口隆史

応用物理学会学術講演会講演予稿集(CD-ROM)  2012.8 

ナノマテリアルのデバイス化を目指して

長田貴弘, 知京豊裕

NIMS NOW  2012.3 

ナノインプリント法を用いたZnOナノロッドの成長制御と光電変換デバイスへの応用

OH Seungjun, 長田貴弘, VOLK Janos, 若山裕

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

ナノテクノロジーにおける埋もれた界面の解析のニーズとソリューション

知京豊裕, 生田目俊秀, 長田貴弘, 小橋和義, 池野成裕, 小椋厚志

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

スカベンジング効果を用いたHfO₂/Si界面のSiO₂の薄膜化

小橋和義, 長田貴弘, 池野成裕, 小椋厚志, 知京豊裕

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

PLD法によるZnO薄膜成長における単結晶ターゲットの効果

長田貴弘, 杉村茂昭, 知京豊裕

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

極薄エピアルミナ膜/CuAl合金単結晶の大気保持中の安定性

吉武道子, 長田貴弘, SONG Weijie, 山内康弘

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

ZnO極性表面上に成長したペンタセン薄膜の表面電位測定

中村立, 長田貴弘, 早川竜馬, OH S.J, 廣芝伸哉, 藤村紀文, 知京豊裕, 若山裕

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

硬X線光電子分光法を用いたP3HT/ZnO界面のバンドアライメント評価

長田貴弘, OH Seungjun, 山下良之, 吉川英樹, 小林啓介, 知京豊裕, 若山裕

応用物理学関係連合講演会講演予稿集(CD-ROM)  2012.2 

stability of an ultra-thin epitaxial alumina film on CuAl alloy single crystal in air

yoshitake michiko, nagata takahiro, song weijie, yamauchi yasuhiro

Abstract of annual meeting of the Surface Science of Japan  2011.12 

極性を有するZnO基板上のペンタセン薄膜の成長過程

中村立, 長田貴弘, 早川竜馬, OH S. J, 廣芝伸哉, 藤村紀文, 知京豊裕, 若山裕

応用物理学会学術講演会講演予稿集(CD-ROM)  2011.8 

Bias-application in Hard X-ray Photoelectronic Study for Advanced Materials

YAMASHITA Yoshiyuki, NAGATA Takahiro, YOSHIKAWA Hideki, CHIKYOW Toyohiro, KOBAYASHI Keisuke

Hyomen Kagaku  2011.6 

配置制御されたZnOナノロッド成長への基板の影響

長田貴弘, VOLK Janos, ERDELYI Robert, OH Seungjun, 知京豊裕, BARSONY Istvan, 若山裕

応用物理学関係連合講演会講演予稿集(CD-ROM)  2011.3 

Zn極性及びO極性ホモエピタキシャルZnO薄膜の表面構造

中村立, 長田貴弘, 芦田淳, 吉村武, 藤村紀文

応用物理学関係連合講演会講演予稿集(CD-ROM)  2011.3 

スカベンジング効果を用いたHfO₂/Si界面のSiO₂の薄膜化

小橋和義, 長田貴弘, 岩下祐太, 池野成裕, 足立哲也, 小椋厚志, 知京豊裕

日本電子材料技術協会秋期講演大会講演概要集  2011 

電圧印加硬X線光電子分光法によるReRAM:金属/HfO₂界面の電子状態評価

長田貴弘, 南風盛将光, 山下良之, 吉川英樹, 小林啓介, 知京豊裕

応用物理学会学術講演会講演予稿集(CD-ROM)  2010.8 

UV‐オゾンクリーニングのPEDOT:PSS薄膜の電気特性への影響

長田貴弘, OH Seungjun, 若山裕, 知京豊裕

応用物理学会学術講演会講演予稿集(CD-ROM)  2010.8 

Cu/HfO₂/Pt構造のパルス電場スイッチング特性

南風盛将光, 田村知大, 長田貴弘, 山部紀久夫, 知京豊裕

応用物理学会学術講演会講演予稿集  2009.9 

酸化ハフニウムを固体電解質としたCu/HfO₂/Pt構造の抵抗スイッチング特性

南風盛将光, 長田貴弘, 知京豊裕

応用物理学関係連合講演会講演予稿集  2009.3 

金属酸化物を用いた原子スイッチ中間層材料の検討 ([日本電子材料技術協会]第44回秋期講演大会--優秀賞受賞論文と受賞者の感想)

南風盛 将光, 長田 貴弘, 知京 豊裕

日本電子材料技術協会会報  2008.11 

ダイレクト式大気圧プラズマCVD法によるGaN薄膜の低温成長における水素添加の効果

長田貴弘, 佐久間芳樹, 南風盛将光, 安西純一郎, 上原剛, 知京豊裕

応用物理学関係連合講演会講演予稿集  2008.3 

FIB‐CVD法により堆積したDLC薄膜の熱処理による構造変化

長田貴弘, 佐久間芳樹, 南風盛将光, 中島清美, 米谷玲皇, 米谷玲皇, 神田一浩, 松井真二, 知京豊裕

応用物理学関係連合講演会講演予稿集  2008.3 

高濃度n⁺‐Si及びp⁺‐Si基板上のNiシリサイドの熱安定性の違い

AHMET P, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井洋

応用物理学関係連合講演会講演予稿集  2008.3 

コンビナトリアル手法によるZnO上のPt系合金Schottky電極の作成

長田貴弘, VOLK J, 吉武道子, 知京豊裕

応用物理学会学術講演会講演予稿集  2007.9 

新規20プロジェクトの紹介と最近の成果―半導体材料センター―高度な機能性をSiデバイスへ―Si集積回路のための多様な材料研究を目指して―

知京豊裕, 小松正二郎, 吉武道子, 今井基晴, 若山裕, 高見誠一, 阿部英樹, 柳生進二郎, 松井ちさと, 長田貴弘, 梅澤直人, 山下良之

NIMS NOW  2007.4 

ダイレクト式大気圧プラズマCVD法によるGaN薄膜の低温成長

長田貴弘, 佐久間芳樹, 安西純一郎, 功刀俊介, 上原剛, 知京豊裕

応用物理学関係連合講演会講演予稿集  2007.3 

パルス電界プラズマCVDを用いたSiエピタキシャル成長

松本光正, 末光眞希, 屋良卓也, 上原剛, 中嶋節男, 豊島安健, 知京豊裕, 長田貴弘, 中島清美

応用物理学関係連合講演会講演予稿集  2007.3 

連続発振レーザーMBEによる有機分子組成傾斜薄膜の作製

柳沼誠一郎, 伊高健治, 松本祐司, 大西剛, LIPPMAA Mikk, 長田貴弘, 知京豊裕, 鯉沼秀臣

応用物理学関係連合講演会講演予稿集  2007.3 

金属酸化物を用いた原子スイッチ中間層材料の検討

南風盛将光, 長田貴弘, 知京豊裕

日本電子材料技術協会秋期講演大会講演概要集  2007 

次世代集積回路における新材料の開発のトレンド―ナノと異種材料からの発想―

知京豊裕, 長田貴弘, 梅澤直人, 吉武道子, 大毛利健治, 山田啓作, 山部紀久夫, 白石賢二, 渡部平司

日本電子材料技術協会秋期講演大会講演概要集  2007 

コンビナトリアル手法によるナノ材料の開発とその評価

知京豊裕, 大毛利健治, 南風盛将光, 梅澤直人, 長田貴弘, 中島清美, 岡崎紀明, 長谷川哲也, 鯉沼秀臣

X線分析討論会講演要旨集  2006.10 

集束イオンビームCVD法によるGaN立体構造の作製と評価 ([日本電子材料技術協会]第42回秋期講演大会--優秀賞受賞論文と受賞者の感想)

長田 貴弘, 佐久間 芳樹, 関口 隆史

日本電子材料技術協会会報  2006.10 

レーザー支援プラズマCVD法によるsp³‐結合性5H‐BNミクロコーンエミッターの低温成長

田中洋則, 小松正二郎, 風見大介, 長田貴弘, 守吉佑介, 岡田勝行

応用物理学会学術講演会講演予稿集  2006.8 

ダイレクト式大気圧プラズマCVD法によるGaN薄膜成長

長田貴弘, 佐久間芳樹, 安西純一郎, 功刀俊介, 上原剛, 知京豊裕

応用物理学会学術講演会講演予稿集  2006.8 

大気圧プラズマCVD法によるGaN薄膜の低温成長

長田貴弘, 上原剛, 佐久間芳樹, 知京豊裕

応用物理学関係連合講演会講演予稿集  2006.3 

大気圧プラズマCVDによる窒化物薄膜作製

長田貴弘, 佐久間芳樹, 知京豊裕, 安西純一郎, 功刀俊介, 上原剛

日本電子材料技術協会秋期講演大会講演概要集  2006 

パルス電界を用いた酸化亜鉛薄膜の電気化学的成長

芦田淳, 大隈孝仁, 長田貴弘, 藤田章雄, 藤村紀文, 中平敦

日本セラミックス協会秋季シンポジウム講演予稿集  2005.9 

コンビナトリアル手法によるPt‐Ru系Schottky電極の作成

長田貴弘, AHMET P, 山田啓作, 筒井謙, 和田恭雄, 知京豊裕

応用物理学会学術講演会講演予稿集  2005.9 

大気圧プラズマCVD法によるGaN薄膜の作製

長田貴弘, 上原剛, 佐久間芳樹, 知京豊裕

応用物理学会学術講演会講演予稿集  2005.9 

光デバイス用GaN立体構造の作製と評価

長田貴弘, 知京豊裕

応用物理学関係連合講演会講演予稿集  2005.3 

コンビナトリアル手法によるナノ材料開発と電子デバイスへの応用

知京豊裕, AHMET P, KUKURZNYAK D, 中島清美, 長田貴弘

表面技術協会講演大会講演要旨集  2005.3 

集束イオンビームCVD法によるGaN立体構造の作製と評価

長田貴弘, 佐久間芳樹, 関口隆史, 知京豊弘, 知京豊弘

日本電子材料技術協会秋期講演大会講演概要集  2005 

コンビナトリアル手法によるZnO‐Schottky素子の作製

長田貴弘, AHMET P, ZO Y Y, 山田啓作, 筒井謙, 和田恭雄, 知京豊裕

応用物理学会学術講演会講演予稿集  2004.9 

単結晶ターゲットを用いたパルスレーザー堆積法によるGaN薄膜の作製

長田貴弘, YOO Y Z, PARHAT A, SONG J H, 鯉沼秀臣, 知京豊裕

応用物理学関係連合講演会講演予稿集  2004.3 

Low‐Energy‐FIBによるGaNナノ構造の作製

長田貴弘, AHMET P, 鯉田崇, 秩父重英, 知京豊裕

応用物理学会学術講演会講演予稿集  2003.8 

ZnO薄膜の表面形態と光導波損失との相関

大田博史, 芦田淳, 中野貴之, 長田貴弘, 藤村紀文, 伊藤太一郎

応用物理学関係連合講演会講演予稿集  2003.3 

ZnO:X(X=Mn,Li)薄膜のリーク電流特性とその電気光学特性

長田貴弘, 芦田淳, 藤村紀文, 伊藤太一郎

応用物理学関係連合講演会講演予稿集  2003.3 

ZnO:X(Mn,Li)薄膜の電気光学効果の周波数特性

長田貴弘, 芦田淳, 藤村紀文, 伊藤太一郎

応用物理学会学術講演会講演予稿集  2002.9 

スパッタZnO:Liエピタキシャル薄膜のリーク電流特性とその電気光学特性

長田貴弘, 芦田淳, 高木裕司, 藤村紀文, 伊藤太一郎

応用物理学関係連合講演会講演予稿集  2002.3 

エキゾティックドーピングされたZnO:Xの屈折率の評価

高木裕司, 長田貴弘, 中野貴之, 芦田淳, 藤村紀文, 伊藤太一郎

応用物理学会学術講演会講演予稿集  2001.9 

ZnO薄膜の機能と光集積回路への応用

藤村紀文, 長田貴弘, 芦田淳, 伊藤太一郎

応用物理学会学術講演会講演予稿集  2001.9 

スパッタZnO:X(Li,F)エピタキシャル薄膜のリーク電流特性とその誘電性

長田貴弘, 中野貴之, 高木裕司, 芦田淳, 藤村紀文, 伊藤太一郎

応用物理学会学術講演会講演予稿集  2001.9 

c軸配向ZnO薄膜の光導波特性

中野貴之, 長田貴弘, 芦田淳, 藤村紀文, 伊藤太一郎

応用物理学会学術講演会講演予稿集  2001.9 

ZnOモノリシック光スイッチング素子の基礎検討

長田貴弘, 芦田淳, 藤村紀文, 伊藤太一郎

応用物理学関係連合講演会講演予稿集  2001.3 

Ba_0.6Sr_0.4TiO₃スパッタ薄膜中の応力状態解析とその特性への影響

長田貴弘, 外山綱造, 藤村紀文, 伊藤太一郎

応用物理学関係連合講演会講演予稿集  1999.3 

Preparation of (112) Oriented CuInSe2 Thin Films with (111) Oriented .BETA.-Cu2Se Thin Films.

NAGATA TAKAHIRO, ASHIDA ATSUSHI, ITO TAICHIRO

応用物理学関係連合講演会講演予稿集  1998.3 

MIS型半導体装置およびその製造方法、並びにその製造に用いるスパッタリングターゲット

長田 貴弘, 知京 豊裕

MIS型半導体装置およびその製造方法、並びにその製造に用いるスパッタリングターゲット

長田 貴弘, 知京 豊裕

MIS型半導体装置およびその製造方法

長田 貴弘, 知京 豊裕

MIS型半導体装置およびその製造方法

長田 貴弘, 知京 豊裕

MIS型半導体装置およびその製造方法

長田 貴弘, 知京 豊裕

MIS型半導体装置およびその製造方法

長田 貴弘, 知京 豊裕

プロトン伝導体および燃料電池

嘉副 裕, ピホシュ ユーリ, 馬渡 和真, 北森 武彦, 北村 健二, 長田 貴弘, 田畑 修, 土屋 智由

プロトン伝導体および燃料電池

嘉副 裕, ピホシュ ユーリ, 馬渡 和真, 北森 武彦, 北村 健二, 長田 貴弘, 田畑 修, 土屋 智由

ビスマス系誘電体用電極及びキャパシタ

長田 貴弘, ソム, クマラグルバラン, 知京 豊裕, 高橋 健一郎, 李 成奇, 鈴木 摂, 恒川 吉文

ビスマス系誘電体用電極及びキャパシタ

長田 貴弘, ソム クマラグルバラン, 知京 豊裕, 高橋 健一郎, 李 成奇, 鈴木 摂, 恒川 吉文

強誘電体キャパシタおよび電子デバイス

長田 貴弘, 北村 健二

強誘電体キャパシタおよび電子デバイス

長田 貴弘, 北村 健二

強誘電体キャパシタおよび電子デバイス

長田 貴弘, 北村 健二

強誘電体キャパシタおよび電子デバイス

長田 貴弘, 北村 健二

誘電体薄膜

長田 貴弘, ソム, クマラグルバラン, 知京 豊裕, 高橋 健一郎, 李 成奇, 鈴木 摂, 恒川 吉文

誘電体薄膜

長田 貴弘, ソム, クマラグルバラン, 知京 豊裕, 高橋 健一郎, 李 成奇, 鈴木 摂, 恒川 吉文

表面増強ラマン分光分析用(SERS)基板、その製造方法、それを用いたバイオセンサおよびそれを用いたマイクロ流路デバイス

北村 健二, 長田 実, 長田 貴弘, 劉 暁燕, グヲツォンツァオ

表面増強ラマン分光分析用(SERS)基板、その製造方法、それを用いたバイオセンサおよびそれを用いたマイクロ流路デバイス

北村 健二, 長田 実, 長田 貴弘, 劉 暁燕, グヲツォンツァオ

sp3−結合性BN高密度相を有するBN薄膜およびその製造方法。

小松 正二郎, 知京 豊裕, 佐藤 裕平, 平野 大輔, 長田 貴弘

多元化合物作製装置

長田 貴弘, 知京 豊裕, 南風盛 将光

窒化ガリウム等のIII族窒化物の成膜方法

長田 貴弘, 知京 豊裕, 上原 剛, 安西 純一郎

窒化ガリウム等のIII族窒化物の成膜方法

長田 貴弘, 知京 豊裕, 上原 剛, 安西 純一郎

窒化ガリウム等のIII族窒化物の成膜方法

長田 貴弘, 知京 豊裕, 上原 剛