Materials Research Society

Synthesis and crystal growth of Mg<SUB>2</SUB>Si by the liquid encapsulated vertical gradient freezing method Reviewed

Reo Nakagawa, Hiroshi Katsumata, Satoshi Hashimoto and Shiro Sakuragi

Japanese Journal of Applied Physics   54   085503-1 - 085503-5   2015.7

Optical transition in nanocrystalline Si doped SiO2 thin films formed by cosputtering Reviewed

Katsuya Hirata, Hiroki Hara, Hiroshi Katsumata

CANADIAN JOURNAL OF PHYSICS   92 ( 7-8 )   732 - 735   2014.7

Effects of Ga doping and nitridation on ZnO films prepared by RF sputtering Reviewed

Takumi Araki, Jun-Ichi Iwata, Hiroshi Katsumata

Materials Research Society Symposium Proceedings   1494   51 - 56   2013

Optical band-gap of TiO2 nanopowders doped with Al 2O3 Reviewed

Keisuke Yoshimura, Tetsuya Hashimoto, Hiroshi Katsumata

Materials Research Society Symposium Proceedings   1493   281 - 286   2013

Deposition of TaN films by RF sputtering and their barrier properties in Cu/TaN/dielectrics/Si MIS structure Reviewed

Hiroaki Tajima, Hiroshi Katsumata, Shin-Ichiro Uekusa

e-Journal of Surface Science and Nanotechnology   10   107 - 113   2012.4

Structural and electrical properties of Co-doped beta-FeSi2 thin films prepared by RF magnetron sputtering Reviewed

M. Sawada, H. Katsumata, Y. Tomokuni, S. Uekusa

ASIAN SCHOOL-CONFERENCE ON PHYSICS AND TECHNOLOGY OF NANOSTRUCTURED MATERIALS   23   9 - 12   2012

Structural and electrical properties of beta-FeSi2 bulk materials for thermoelectric applications Reviewed

H. Yamada, H. Katsumata, D. Yuasa, S. Uekusa, M. Ishiyama, H. Souma, I. Azumaya

ASIAN SCHOOL-CONFERENCE ON PHYSICS AND TECHNOLOGY OF NANOSTRUCTURED MATERIALS   23   13 - 16   2012

Growth of Si0.5Ge0.5 Single Crystals by the Traveling Liquidus-zone Method and their Structural Characterization Reviewed

Atsushi Oda, Kyoichi Kinoshita, Shin-ichi Yoda, Hiroshi Katsumata, Shin-ichiro Uekusa

IUMRS INTERNATIONAL CONFERENCE IN ASIA 2011   36   404 - 410   2012

Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin Reviewed

T. Iwamaru, H. Katsumata, S. Uekusa, H. Ooyagi, T. Ishimura, T. Miyakoshi

ASIAN SCHOOL-CONFERENCE ON PHYSICS AND TECHNOLOGY OF NANOSTRUCTURED MATERIALS   23   69 - 72   2012

Experimental approaches to the study of β-FeSi<SUB>2</SUB>

H. Katsumata, K. Mitobe, M. Sawada, S. Nakajima, H. Yamada, M. Zakir Hossain, and S. Uekusa

24 - 28   2011.3

Properties of TaN Films for ULSIs Prepared by Reactive Sputter Deposition Reviewed

H. Tajima, N. Shiobara, H. Katsumata and S. Uekusa

Journal of Surface Analysis   17 ( 3 )   247 - 251   2011.3

PHOTOLUMINESCENT PROPERTY OF Er AND Yb DOPED nc-Si/SiO2 THIN FILM

Shinya Ouchi, Yuki Komori, Hiroshi Katsumata, Shin-ichiro Uekusa

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 29   29   55 - 58   2011

RESISTIVITY VARIATION OF TaN THIN FILMS FOR BARRIER METAL

Hiroaki Tajima, To-oru Tanaka, Hiroshi Katsumata, Shin-ichiro Uekusa

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 29   29   49 - 54   2011

The effect of crystalline structure on photoluminescence of the beta-FeSi(2) film prepared by pulsed laser deposition using two types of target Reviewed

M. Zakir Hossain, H. Katsumata, S. Uekusa

ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010)   11   158 - 162   2011

Photoluminescence properties of AlN:Eu,Si thin films

T.Hiranuma, K.Yoshimura, H.Katsumata, and S.Uekusa

Proc. of the 29th Symposium on Matererials Science and Engineering Research Center of Ion Beam Technology, Hosei University   45 - 48   2010.12

The crystalline effect of the of the β-FeSi2 film using two types target prepared by pulsed laser deposition

M. Zakir Hossain, H. Katsumata, S. Uekusa

ICECE 2010 - 6th International Conference on Electrical and Computer Engineering   210 - 213   2010

Pb-free bumping for high-performance SoC Reviewed

H Ezawa, M Seto, H Katsumata

54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS   1   655 - 660   2004

Development of dishing-less slurry for polysilicon chemical-mechanical polishing process Reviewed

N Miyashita, S Uekusa, M Kodera, Y Matsui, H Katsumata

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 9A )   5433 - 5437   2003.9

Investigation of Cleaning Process for Poly Si Trench Using Electrolytic Ionized Water with Carbon Electrode Reviewed

MIYASHITA Naoto, UEKUSA Shin-ichiro, KATSUMATA Hiroshi, KODERA Masako, MATSUI Yoshitaka

The Transactions of the Institute of Electronics, Information and Communication Engineers C   J86-C ( 6 )   623 - 633   2003.6

Oxygen plasma damage in GaAs directly exposed to surface-wave plasma Reviewed

K Aoki, S Uekusa, H Katsumata

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 9 )   5762 - 5768   2002.9

Characterization of a new cleaning method using electrolytic ionized water for polysilicon chemical mechanical polishing process Reviewed

N Miyashita, S Uekusa, H Katsumata

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 8 )   5098 - 5103   2002.8

Evaluation of oxygen-plasma damage in GaAs exposed to a surface-wave plasma source developed for the ashing process Reviewed

K Aoki, S Uekusa, T Yamauchi, H Katsumata

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 9A )   5438 - 5443   2001.9

Fabrication of heterostructure p-beta-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates Reviewed

H Katsumata, Y Makita, T Takada, H Tanoue, N Kobayashi, M Hasegawa, H Kakemoto, T Tsukamoto, S Uekusa

THIN SOLID FILMS   381 ( 2 )   244 - 250   2001.1

Etching, smoothing, and deposition with gas-cluster ion beam technology Reviewed

JA Greer, DB Fenner, J Hautala, LP Allen, DiFilippo, V, N Toyoda, Yamada, I, J Matsuo, E Minami, H Katsumata

SURFACE & COATINGS TECHNOLOGY   133   273 - 282   2000.11

O-2 cluster ion-assisted deposition for tin-doped indium oxide films Reviewed

J Matsuo, H Katsumata, E Minami, Yamada, I

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   161   952 - 957   2000.3

High-intensity oxygen cluster ion beam generation and its application to cluster ion-assisted deposition Reviewed

J Matsuo, E Minami, M Saito, N Toyoda, H Katsumata, Yamada, I

EUROPEAN PHYSICAL JOURNAL D   9 ( 1-4 )   635 - 638   1999.12

Optical and electrical characterizations of Mn doped p-type beta-FeSi2 Reviewed

T Takada, Y Makita, T Shima, T Banba, K Shikama, H Sanpei, M Hasegawa, A Sandhu, Y Hoshino, H Katsumata, S Uekusa

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   147 ( 1-4 )   337 - 342   1999.1

Optical thin film formation by gas-cluster ion beam assisted deposition Reviewed

H Katsumata, J Matsuo, T Nishihara, T Tachibana, K Yamada, M Adachi, E Minami, Yamada, I

APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2   475 ( 475 )   409 - 412   1999

Fullerene ion (C<inf>60</inf>⁺) implantation in GaAs(100) substrate Reviewed

Takashi Nishihara, Hiroshi Katsumata, Jiro Matsuo, Isao Yamada

Proceedings of the International Conference on Ion Implantation Technology   2   1203 - 1206   1999

Formation of polycrystalline beta-FeSi2 layers by ion-implantation and their optical properties Reviewed

H Kakemoto, H Katsumata, T Takada, YS Tsai, M Hasegawa, S Sakuragi, N Kobayashi, Y Makita, T Tsukamoto, S Uekusa

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING   253 ( 1-2 )   284 - 291   1998.9

Formation of oxide thin films for optical applications by O<SUB>2</SUB>-cluster ion beam assisted deposition Reviewed

H. Katsumata, J. Matsuo, T. Nishihara, T. Tachibana, E. Minami, K. Yamada, M. Adachi, and I. Yamada

IEEE proceedings of the 12th International Conference on Ion Implantation Technology, Kyoto, Japan, IEEE Cat. No.98EX144   1195 - 1198   1998.6

Diffusion and defects in Yb-implanted InP Reviewed

S Uekusa, H Katsumata

DEFECT AND DIFFUSION FORUM   159   113 - 123   1998

Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation Reviewed

N Kobayashi, DH Zhu, M Hasegawa, H Katsumata, Y Tanaka, N Hayashi, Y Makita, H Shibata, S Uekusa

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   127   350 - 354   1997.5

Effect of multiple-step annealing on the formation of semiconducting beta-FeSi2 and metallic alpha-Fe2Si5 on Si(100) by ion beam synthesis Reviewed

H Katsumata, Y Makita, N Kobayashi, H Shibata, M Hasegawa, S Uekusa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36 ( 5A )   2802 - 2812   1997.5

Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis

H. Katsumata, Y. Makita, N. Kobayashi, M. Hasegawa, H. Shibata, H. Takahashi, I. Aksenov, A. Obara, S. Kimura, J. Tanabe, and S. Uekusa

Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan   201 - 206   1997.3

Ion beam synthesis and characterization of metastable group-IV alloy semiconductors Reviewed

N. Kobayashi, H. Katsumata, M. Hasegawa, N. Hayashi, Y. Makita, H. Shibata, and S. Uekusa

Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan   201-206   218 - 223   1997.3

Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy layers on Si formed by ion beam synthesis Reviewed

H Katsumata, N Kobayashi, Y Makita, M Hasegawa, N Hayashi, H Shibata, S Uekusa

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   121 ( 1-4 )   146 - 150   1997.1

Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy Reviewed

N Kobayashi, DH Zhu, H Katsumata, H Kakemoto, M Hasegawa, N Hayashi, H Shibata, Y Makita, S Uekusa, T Tsukamoto

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   121 ( 1-4 )   199 - 202   1997.1

Fabrication of p-beta-Fe1-xMnxSi2/n-Si heterostructure diode and their electrical and optical properties Reviewed

T Takada, H Katsumata, Y Makita, N Kobayashi, M Hasegawa, S Uekusa

THERMOELECTRIC MATERIALS - NEW DIRECTIONS AND APPROACHES   478   267 - 272   1997

Growth of Ge1-xCx thin films by combined low-energy ion beam and molecular beam epitaxy method Reviewed

H Shibata, P Fons, A Yamada, S Kimura, Y Makita, A Obara, N Kobayashi, H Takahashi, H Katsumata, J Tanabe, S Uekusa

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997   35 - 40   1997

Growth of Ge1-xCx alloys on Si by combined low energy ion beam and molecular beam epitaxy method Reviewed

H Shibata, S Kimura, P Fons, A Yamada, Y Makita, A Obara, N Kobayashi, H Takahashi, H Katsumata, J Tanabe, S Uekusa

MICROSTRUCTURE EVOLUTION DURING IRRADIATION   439   233 - 238   1997

Growth of Ge<SUB>1-x</SUB>C<SUB>x</SUB> alloys on Si by combined low-energy ion beam deposition and molecular beam epitaxy method Reviewed

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, and S. Uekusa

Mater. Res. Soc. Symp. Proc.   438   393 - 398   1996.12

Optical absorption and photoluminescence studies of beta-FeSi2 prepared by heavy implantation of Fe+ ions into Si Reviewed

H Katsumata, Y Makita, N Kobayashi, H Shibata, M Hasegawa, Aksenov, I, S Kimura, A Obara, S Uekusa

JOURNAL OF APPLIED PHYSICS   80 ( 10 )   5955 - 5962   1996.11

Synthesis of beta-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates Reviewed

H Katsumata, Y Makita, N Kobayashi, M Hasegawa, H Shibata, S Uekusa

THIN SOLID FILMS   281   252 - 255   1996.8

Electron spin resonance studies in beta-FeSi2 crystals

Aksenov, I, H Katsumata, Y Makita, Y Kimura, T Shinzato, K Sato

JOURNAL OF APPLIED PHYSICS   80 ( 3 )   1678 - 1681   1996.8

Photoluminescence and Raman scattering studies of 2 MeV YB+-implanted InP as a function of etching depth Reviewed

H Katsumata, S Uekusa, H Sai, M Kumagai

JOURNAL OF APPLIED PHYSICS   80 ( 4 )   2383 - 2387   1996.8

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization Reviewed

N Kobayashi, M Hasegawa, N Hayashi, H Katsumata, Y Makita, H Shibata, S Uekusa

APPLIED SURFACE SCIENCE   100   498 - 502   1996.7

Optical, electrical and structural properties of polycrystalline beta-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon Reviewed

H Katsumata, Y Makita, H Takahashi, H Shibata, N Kobayashi, M Hasegawa, S Kimura, A Obara, J Tanabe, S Uekusa

PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS   479 - 483   1996

Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 133-136, 1995) Reviewed

T Iida, K Harada, S Kimura, T Shima, H Katsumata, Y Makita, H Shibata, N Kobayashi, SI Uekusa, T Matsumori, K Kudo

ION BEAM MODIFICATION OF MATERIALS   B106   133 - 136   1996

Optical and structural properties of beta-FeSi2 layers on Si fabricated by triple Fe-56 ion implantations Reviewed

H Katsumata, HL Shen, N Kobayashi, Y Makita, M Hasegawa, H Shibata, S Kimura, A Obara, S Uekusa

ION BEAM MODIFICATION OF MATERIALS   943 - 946   1996

Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy Reviewed

H Shibata, Y Makita, H Katsumata, S Kimura, N Kobayashi, M Hasegawa, S Hishita, AC Beye, H Takahashi, J Tanabe, S Uekusa

SILICIDE THIN FILMS - FABRICATION, PROPERTIES, AND APPLICATIONS   402   517 - 522   1996

Growth of Si1-xSnx layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth Reviewed

N Kobayashi, M Hasegawa, N Hayashi, H Katsumata, Y Makita, H Shibata, S Uekusa

ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING   396   207 - 212   1996

Structural properties of beta-FeSi2 bulk crystal grown by horizontal gradient freeze method Reviewed

H Kakemoto, Y Tsai, AC Beye, H Katsumata, S Sakuragi, Y Makita, A Obara, N Kobayashi, H Shibata, S Uekusa, T Tsukamoto, T Tsunoda, Y Imai

SILICIDE THIN FILMS - FABRICATION, PROPERTIES, AND APPLICATIONS   402   331 - 336   1996

Structural and optical properties of B-FeSi2 film prepared by laser ablation method and comparison of B-FeSi2 films prepared by three different methods Reviewed

Hirofumi Kakemoto, Yunosuke Makita, Hiroshi Katsumata, Tsutomu Iida, Christian Stauter, Akira Obara, Hajime Shibata, Yu shin Tsai, Shiro Sakuragi, Naoto Kobayashi, Masataka Hasegawa, Shin ichiro Uekusa, Takeyo Tsukamoto

Proceedings of SPIE - The International Society for Optical Engineering   2888   32 - 43   1996

Electrical properties of beta-FeSi2 bulk crystal grown by horizontal gradient freeze method Reviewed

H Shibata, Y Makita, H Kakemoto, Y Tsai, S Sakuragi, H Katsumata, A Obara, N Kobayashi, S Uekusa, T Tsukamoto, T Tsunoda, Y Imai

PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS   62 - 66   1996

Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy Reviewed

T Iida, K Harada, S Kimura, T Shima, H Katsumata, Y Makita, H Shibata, N Kobayashi, SI Uekusa, T Matsumori, K Kudo

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   106 ( 1-4 )   133 - 136   1995.12

Structural and optical characterization of beta-FeSi2 layers on Si formed by ion beam synthesis Reviewed

N Kobayashi, H Katsumata, HL Shen, M Hasegawa, Y Makita, H Shibata, S Kimura, A Obara, S Uekusa, T Hatano

THIN SOLID FILMS   270 ( 1-2 )   406 - 410   1995.12

OPTICAL AND CRYSTALLINE PROPERTIES OF YB IMPLANTED INP Reviewed

H KATSUMATA, S UEKUSA, A MAJIMA, M KUMAGAI

JOURNAL OF APPLIED PHYSICS   77 ( 5 )   1881 - 1887   1995.3

Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Gc and C ion implantation and their structural and optical properties Reviewed

N Kobayashi, H Katsumata, Y Makita, M Hasegawa, N Hayashi, H Shibata, S Uekusa, S Hishita

FILM SYNTHESIS AND GROWTH USING ENERGETIC BEAMS   388   189 - 194   1995

OPTICAL AND STRUCTURAL CHARACTERIZATIONS OF beta-FESI2 SYNTHESIZED BY FE ION IMPLANTATION Reviewed

H KATSUMATA, T MUTA, H SHEN, N KOBAYASHI, M HASEGAWA, H SHIBATA, A YAMADA, Y MAKITA, N KUTSUWADA, S UEKUSA, T HATANO

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995   59 - 64   1995

OPTICAL-ACTIVITY OF YB3+ IN MEV ION-IMPLANTED INP Reviewed

S UEKUSA, A MAJIMA, H KATSUMATA, Y NOYORI, M KUMAGAI

RARE EARTH DOPED SEMICONDUCTORS   301   201 - 206   1993

Structural and Optical Properties of SiO<SUB>x</SUB> Thin Films Embedded with Si Quantum Dots Formed by Co-Sputtering for MIS Indoor Photovoltaic Applications

Toshiya Kondo, Hiroshi Katsumata

The 7th Asia-Pacific Conference on Semiconducting Silicides and Related Materials  2025.7 

Comparative Evaluation of Mg<SUB>2</SUB>Si Thin Films: Direct Sputtering Deposition with an Mg2Si Target vs. Solid-Phase Growth on Si Substrates with an Mg Target and Their Reproducibility

Ryoga Toyama, Hiroshi Katsumata

The 7th Asia-Pacific Conference on Semiconducting Silicides and Related Materials  2025.7 

Optimization of Simultaneous RF/DC Magnetron Sputtering Process for Improving the Chemical Composition and Crystalline Quality of Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB> Thin Films

43rd Electronic Materials Symposium (EMS43) (We1-5)  2024.10  電子材料シンポジウム運営委員会

Effect of Post-depositon Annealing Conditions on the Types of Electrical Conductivity in Mg<SUB>2</SUB>Si Thin Films Deposited by RF Magnetron Sputtering

Keisuke Asano, Hiroshi Katsumata

43rd Electronic Materials Symposium (EMS43) (We1-10)  2024.10  電子材料シンポジウム運営委員会

Effect of RF Power on the Optical Properties of SiC Quantum Dots in SiO<SUB>x</SUB> Films Formed by RF Magnetron Co-Sputtering

Sota Iwasaki, Hiroshi Katsumata

43rd Electronic Materials Symposium (EMS43) (We2-13)  2024.10  電子材料シンポジウム運営委員会

SiC添加SiO<SUB>x</SUB>薄膜の酸素含有量と酸素不純物による可視発光の相関

岩崎 颯太,勝俣 裕

第85回応用物理学会秋季学術講演会（20p-P02-5）  2024.9 

Cu, N共添加ZnO薄膜の電気特性の熱処理温度依存性

田中雅樹、勝俣裕

第85回応用物理学会秋季学術講演会（20a-A22-7）  2024.9 

Mg<SUB>2</SUB>Si薄膜の膜中酸素量に及ぼすスパッタリングおよびアニール条件の影響

淺野圭祐,勝俣裕

第85回応用物理学会秋季学術講演会（16p-P06-2）  2024.9  応用物理学会

SiO<SUB>x</SUB>薄膜中のSi量子ドットのバンドギャップ縮小に関する研究

近藤 利哉,勝俣 裕

第21回シリサイト゛系半導体・夏の学校（P-25）  2024.7  応用物理学会シリサイド系半導体と関連物質研究会

Mg<SUB>2</SUB>Siターゲットを用いたRFマグネトロンスパッタリング法によるMg<SUB>2</SUB>Si薄膜の形成と物性評価

外山 涼雅,勝俣 裕

第21回シリサイト゛系半導体・夏の学校（P-11）  2024.7  応用物理学会シリサイド系半導体と関連物質研究会

RFマグネトロンスパッタリング法により作製したSiC添加SiO<SUB>x</SUB>薄膜の光学的特性のRFパワー依存性

岩崎 颯太,勝俣 裕

第21回シリサイト゛系半導体・夏の学校（P-26）  2024.7  応用物理学会シリサイド系半導体と関連物質研究会

RFマグネトロンスパッタリング法によるMg<SUB>2</SUB>Si薄膜の形成とポストアニールが電気伝導特性に与える影響

淺野 圭祐,勝俣 裕

第21回シリサイト゛系半導体・夏の学校（P-１２）  2024.7  応用物理学会シリサイド系半導体と関連物質研究会

Cu, N共添加によるp型ZnO薄膜の形成と半導体固体電池への応用

田中雅樹,勝俣裕

第21回シリサイト゛系半導体・夏の学校（P-27）  2024.7  応用物理学会シリサイド系半導体と関連物質研究会

The Influence of Ar-N<SUB>2</SUB>/O<SUB>2</SUB> Flow Ratio on the Types of Electrical Conductivity in Cu and N co-doped ZnO Films formed by RF Magnetron Co-Sputtering International conference

Masaki Tanaka, Hiroshi Katsumata

TACT2023 International Thin Films Conference (C-P-134)  2023.11  Taiwan Association for Coating and Thin Film Technology

Evaluation of the Effects of Structural Parameters on External Quantum Efficiency of Si/Mg<SUB>2</SUB>Si Heterojunction Photodiodes Using Device Simulation International conference

Keisuke Asano, Hiroshi Katsumata

TACT2023 International Thin Films Conference (C-P-164)  2023.11  Taiwan Association for Coating and Thin Film Technology

Impact of Interfacial SiO<SUB>2</SUB> Layers on the Photovoltaic Characteristics of n-type Nanocrystalline β‐FeSi<SUB>2</SUB> Embedded in Polycrystalline Si Formed on p-type Si Substrates International conference

Kenta Yoshimura, Takumi Kidokoro, Hiroshi Katsumata

TACT2023 International Thin Films Conference (B-P-80)  2023.11  Taiwan Association for Coating and Thin Film Technology

Optical and Electrical Properties of SiC Added SiO<SUB>x</SUB> Films for Light Emitting and Sensing Devices International conference

Sota Iwasaki, Takamasa Nakamura, Hiroshi Katsumata

TACT2023 International Thin Films Conference (B-P-161)  2023.11  Taiwan Association for Coating and Thin Film Technology

n-ナノ結晶 β-FeSi<SUB>2</SUB>含有Si薄膜/p-Siヘテロ接合素子の光起電力特性改善

吉村 賢太,城所 拓海,勝俣 裕

第84回応用物理学会秋季学術講演会（23p-B205-5）  2023.9  応用物理学会

デバイスシミュレーションによるSi/Mg<SUB>2</SUB>Siヘテロ接合フォトダイオードの構造パラメータの最適化

淺野 圭祐,勝俣 裕

第84回応用物理学会秋季学術講演会（22a-B202-6）  2023.9  応用物理学会

p型Mg2Si<SUB>1-x</SUB>Sn<SUB>x</SUB>薄膜を用いたフォトダイオードの作製と 特性評価

肥田 雄斗,勝俣 裕

第84回応用物理学会秋季学術講演会（22a-B202-7）  2023.9  応用物理学会

SiC添加SiO<SUB>x</SUB>薄膜の光吸収および発光特性の膜厚・熱処 理温度依存性

岩崎 颯太,中村 昂雅, 勝俣 裕

第84回応用物理学会秋季学術講演会（22a-C401-7）  2023.9  応用物理学会

Cu, N添加ZnO薄膜の電気伝導に及ぼす酸素流量比の影響

田中 雅樹,勝俣 裕

第84回応用物理学会秋季学術講演会（21p-P09-21）  2023.9  応用物理学

SiC添加SiO<SUB>x</SUB>薄膜からの可視発光増強とSiC量子ドットの物性予測

勝俣 裕

原子スケールシミュレーション活用セミナー2023  2023.7  株式会社アスムス

ナノ結晶β-FeSi<SUB>2</SUB>/Si 複合薄膜の形成と光電変換素子への応用

吉村賢太,城所拓海,勝俣裕

第20回シリサイド系半導体・夏の学校（P-7)  2023.7  応用物理学会シリサイド系半導体と関連物質研究会

SiC添加SiO<SUB>x</SUB>薄膜の光物性評価と光デバイスへの応用

岩崎 颯太,中村 昂雅,小野 恒義,勝俣 裕

第20回シリサイド系半導体・夏の学校（P-9)  2023.7  応用物理学会シリサイド系半導体と関連物質研究会

SiN<SUB>x</SUB>膜の光学的特性の成膜および熱処理条件依存性

田中雅樹,松田朋大,勝俣裕

第20回シリサイド系半導体・夏の学校（P-10)  2023.7  応用物理学会シリサイド系半導体と関連物質研究会

デバイスシミュレーションによるSi/Mg<SUB>2</SUB>Si ヘテロ接合デバイスの光電変換特性の評価

淺野 圭祐,勝俣 裕

第20回シリサイド系半導体・夏の学校（P-8)  2023.7  応用物理学会シリサイド系半導体と関連物質研究会

Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB> 薄膜の形成と赤外受光素子への応用

肥田雄斗,勝俣 裕

第20回シリサイド系半導体・夏の学校（P-6)  2023.7  応用物理学会シリサイド系半導体と関連物質研究会

Correlation between Plasma Color and Properties of Mg<SUB>2</SUB>Si Thin Films formed by RF Magnetron Sputtering International conference

Yuto Hida, Syunta Owari, Kenta Uefuji and Hiroshi Katsumata

6th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDE 2022) (P-II-12, pp.151-15)  2022.7 

第一原理計算によるナノ結晶SiCの結晶構造および物性予測

小野恒義,中村昂雅, 勝俣裕

第69回応用物理（24p－F408-3）  2022.3  応用物理学会

RFマグネトロン共スパッタリング法によるSiC添加SiO<SUB>x</SUB>系薄膜の作製と光吸収および発光スペクトルの評価

中村 昂雅,小野 恒義,勝俣 裕

第69回応用物理学会春季学術講演会（24p－F408-4）  2022.3  応用物理学会

ナノ結晶β-FeSi<SUB>2</SUB>/Si複合薄膜のキャリア密度制御

城所拓海,松田朋大,勝俣裕

第69回応用物理学会春季学術講演（23a-F308-10））  2022.3  応用物理学会

SiN<SUB>x</SUB>膜の膜質に及ぼすスパッタガス圧力，Ar/N<SUB>2</SUB>比及びSi添加の影響

松田 朋大,城所 拓海,勝俣 裕

第69回応用物理学会春季学術講演会（26a－E103-6）  2022.3  応用物理学会

Band Offsets and Charge-Discharge Characteristics of Semiconductor-Based Solid-State Rechargeable Battery with pin Structure International conference

Hiroshi Katsumata, Akito Sasaki, Hideaki Hirabayashi and Hidehiko Yabuhara

Material Research Meeting 2021 (MRM2021) (D2-PV22-08)  2021.12  一般社団法人 日本MRS

First principles calculations and experimental studies of the bandgap of nanocrystalline SiC International conference

Tsuneyoshi Ono, Takamasa Nakamura and Hiroshi Katsumata

TACT2021 International Thin Films Conference (G-P-077)  2021.11  Taiwan Association for Coating and Thin Film Technology

Control of hole carrier density of Si/nanocrystalline β-FeSi<SUB>2</SUB> composite films by co-sputtering International conference

Takumi Kidokoro, Tomohiro Matsuda, Hiroshi Katsumata

TACT2021 International Thin Films Conference (A-P-106)  2021.11  Taiwan Association for Coating and Thin Film Technology

Deposition of Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB> films by co-sputtering using two different targets and a comparison of the effect of subsequent thermal annealing process on film properties International conference

Kenta Uefuji, Hiroshi Katsumata

TACT2021 International Thin Films Conference (C-P-146)  2021.11  Taiwan Association for Coating and Thin Film Technology

Effect of annealing temperature on the light absorption and visible photoluminescence spectra of nanocrystalline SiC embedded in SiO<SUB>x</SUB> films prepared by co-sputtering International conference

Takamasa Nakamura, Tsuneyoshi Ono and Hiroshi Katsumata

TACT2021 International Thin Films Conference (B-P-093)  2021.11  Taiwan Association for Coating and Thin Film Technology

Film properties of silicon nitride thin films embedded with nanocrystalline Si International conference

Tomohiro Matsuda, Takumi Kidokoro, Hiroshi Katsumata

TACT2021 International Thin Films Conference (A-P-166)  2021.11  Taiwan Association for Coating and Thin Film Technology

2元同時スパッタリング法によるMg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB>薄膜の形成

上藤 健太,勝俣 裕

第82回応用物理学会秋季学術講演会(11a-N304-6)  2021.9  公益社団法人 応用物理学会

第一原理計算によるナノ結晶SiCの結晶構造予測

小野 恒義,中村 昂雅,勝俣 裕

第１９回シリサイド系半導体・夏の学校（P-34, p. 63)  2021.8  応用物理学会シリサイド系半導体と関連物質研究会

Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB>薄膜の構造と電気特性に及ぼす熱処理方法の影響

上藤 健太,勝俣 裕

第１９回シリサイド系半導体・夏の学校（P-32, p. 61)  2021.8  応用物理学会シリサイド系半導体と関連物質研究会

Mn 添加a-Si/β-FeSi<SUB>2</SUB>複合薄膜の正孔密度のアニール温度依存性

城所 拓海,松田 朋大,勝俣 裕

第１９回シリサイド系半導体・夏の学校（P-33, p. 62)  2021.8  応用物理学会シリサイド系半導体と関連物質研究会

共スパッタリング法により作製したSiC 添加SiO<SUB>x</SUB>薄膜における 可視発光および光吸収スペクトルの熱処理温度依存性

中村 昂雅,小野 恒義,勝俣 裕

第１９回シリサイド系半導体・夏の学校（P-34, p. 63)  2021.8  応用物理学会シリサイド系半導体と関連物質研究会

窒化シリコン膜の膜質に及ぼすSi添加および熱処理雰囲気の影響

松田 朋大,城所 拓海,勝俣 裕

第１９回シリサイド系半導体・夏の学校（P-31, p. 60)  2021.8  応用物理学会シリサイド系半導体と関連物質研究会

Evaluation of Insulating Magnetic Materials Composed of Epoxy Resin and Pure Iron Powder for Motor and Reactor Core Applications International conference

Katsuya Hirata, Gaku Obara and Hiroshi Katsumata

The 23rd International Conference on Electrical Machines and Systems (ICEMS2020-Hamamatsu)  2020.11  The IEEJ Industry Applications Society (IEEJ-IAS)

同時スパッタリング法によるMg<SUB>2</SUB>SiSn系薄膜の形成と電気伝導特性

勝俣裕,布施翔太郎

NIMS ナノシミュレーション ワークショップ 2019  2019.12  国立研究開発法人 物質・材料研究機構 国際ナノアーキテクトニクス研究拠点

Frequency dependence of alternating current conductivity of Si/β-FeSi<SUB>2</SUB> composite thin films with different post-heat treatment temperatures

Yuta Saito, Hiroshi Katsumata

2019.9 

Effects of post-annealing conditions on crystal structure and electrical properties of Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB> thin films

Syotaro Fuse, Hiroshi Katsumata

2019.9 

Photoluminescence excitation spectra of AlN films co-doped with Si and Eu

Hayato Kasuya, Kazusa Morimoto, Kazuya Iwade, and Hiroshi Katumata

2019.9 

Characterization of insulation properties and magnetic permeability of composites based on epoxy resin containing iron powders

Katsuya Hirata, Gaku Obara, Hiroshi Katsumata

2019.9 

Effects of Si and C additive amount and post-annealing temperature on the optical properties of amorphous and nanocrystalline SiC embedded in silicon oxide films

Rei Narimatsu and Hiroshi Katsumata

2019.9 

Photoluminescence and photoluminescence excitation spectra of Eu and Si co-doped AlN films for visible light emitting devices International conference

Hiroshi Katsumata, Hayato Kasuya, Kazusa Morimoto and Kazuya Iwade

8th International Workshop on Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE19) (P30)  2019.9 

Formation of Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB> Thin Films by Co-sputtering and Their p-Type Electrical Conduction International conference

Syotaro Fuse and Hiroshi Katsumata

5th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDE 2019) (Tue-a-O29)  2019.7 

Optical Properties of Amorphous and Nanocrystalline SiC Embedded in Silicon Oxide Films Prepared by Co-sputtering International conference

R. Narimatsu, K. Morimoto, and H. Katsumata

5th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDE 2019) (P25)  2019.7 

Structural, Optical and AC Conductivity Studies on Amorphous-Si/β-FeSi<SUB>2</SUB> Composite Thin Films International conference

Y. Saito and H. Katsumata

5th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDES 2019) (P10)  2019.7 

Formation of amorphous and nanocrystalline SiC in Si oxide films and evaluation of their optical properties

Rei Narimatsu, Toshiei Kawamura, Kazusa Morimoto, Hiroshi Katsumata

2019.3 

Electrical conduction of amorphous Si/β-FeSi<SUB>2</SUB> composite thin films

Y. Saito, H. Katsumata

2019.3 

Enhancement and stabilization of blue photoluminescence from Eu and Si codoped AlN films formed by reactive co-sputtering International conference

Kazusa Morimoto, Hiroshi Katsumata

International Workshop on Nitride Semiconductors, 2018  2018.11 

The influence of co-doped materials on the formation of Eu and Si co-doped AlN thin films by sputtering method

Kazusa Morimoto, Hiroshi Katumata

2018.9 

Electrical properties of MgSiSn thin films formed by co-sputtering

Syotaro Fuse, Hideyuki Wada, Hiroshi Katsumata

2018.9 

Fundamentals of materials characterization of thin films and recent topics

Hiroshi Katsumata

2018.7 

Formation of MgSiSn thin films by co-sputtering and the evaluation of physical properties

Syotaro Fuse, Hideyuki Wada, Hiroshi Katsumata

2018.7 

Formation of a-Si/β-FeSi<SUB>2</SUB> composite thin films and their application in semiconductor-all-solid-state secondary batteries

Yuta Saito, Hiroshi Katsumata

2018.7 

The influence of heat treatment conditions and carbon addition during formation of Si-based nanocrystals on their optical properties

Rei Narimatsu, Toshiei Kawamura, Kazusa Morimoto, Hiroshi Katsumata

2018.7 

Blue and red photoluminescence from Eu and Si codoped AlN films formed by reactive co-sputtering International conference

Kazusa Morimoto, Kazuya Iwade, Hiroshi Katsumata

TACT2017 International Thin Films Conference (C-P-0171)  2017.10  Taiwan Association for Coating and Thin Film Technology

Prediction of nanocrystalline-Si size in SiO2 matrix based on LSW theory International conference

T. Kawamura, H. Katsumata

TACT2017 International Thin Films Conference (C-P-0147)  2017.10  Taiwan Association for Coating and Thin Film Technology

Prediction of nanocrystalline-Si size in SiO<SUB>2</SUB> matrix based on LSW theory International conference

T. Kawamura and H. Katsumata

TACT2017 International Thin Films Conference (C-P-0147)  2017.10  Taiwan Association for Coating and Thin Film Technology

Formation of Mg<SUB>2</SUB>Si<SUB>1-x</SUB>Sn<SUB>x</SUB> thin films by co-sputtering

2017.9 

Crystal Growth of Mg<SUB>2</SUB>Si for Thermoelectric Applications by the Liquid Encapsulated Vertical Gradient Freezing Method Invited International conference

H. Katsumata, H. Wada, M. Iwamoto, H. Yamamoto, T. Kataoka, S. Hirono, M. Ishikiriyama

EMN 3CG & Metallic Glasses Meeting (pp.35-36)  2017.8  OAHOST

Formation of amorphous Si/β-FeSi2 composite thin films by co-sputtering and their characterization

Yuta Saito, Masashi Sawata, Hiroshi Katsumata

2017.7 

Influence of form of raw materials and filler content of liquid encapsulant on Mg<SUB>2</SUB>Si crystal growth by vertical gradient freezing method

Syotaro Fuse, Hiroki Wada, Hiroshi Katsumata, Shiro Sakuragi

2017.7 

Prediction of nanocrystalline-Si size in SiO<SUB>2</SUB> matrix based on LSW theory

Toshiei Kawamura, Hiroshi Katsumata

2017.3 

The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg<SUB>2</SUB>Si thin films

Hideyuki Wada, Takehiro Suzuki, Gou Yasuda, Hiroshi Katsumata, Tomoharu Kataoka, Hidenari Yamamoto, Shinsuke Hirono, Mamoru Ishikiriyama

2016.9 

Bulk Single Crystal Growth of Mg<SUB>2</SUB>Si by the Liquid Encapsulated Vertical Gradient Freezing Method International conference

H. Katsumata, R. Nakagawa, H. Wada, S. Hashimoto, S. Sakuragi

Energy, Materials and Nanotechnology, the Collaborative Conference on Crystal Growth (EMN-3CG)  2016.9 

Vertical Gradient Freeze Growth of Mg<SUB>2</SUB>Si crystals using Liquid Encapsulated Liquinert Process International conference

H. Wada, H. Syono, H. Katsumata, S. Sakuragi

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (TuP-G06-35)  2016.8  OAHOST

Formation of Eu,Si codoped AlN thin films on Si substrate by reactive co-sputtering for heterojunction visible light emitting diode International conference

K. Iwade, H. Katsumata

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (TuP-T09-8)  2016.8 

Si-based visible luminescent material grown on Si substrates by chemical reaction with Si powder International conference

T. Yamaguchi, H. Katsumata

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (Tu1-G03-7)  2016.8 

Influence of shape and purity of raw materials and halogen treatment of liquid encapsulant on Mg<SUB>2</SUB>Si crystal growth by vertical gradient freezing method

Hiroki Wada, Hiroki Shouno, Hiroshi Katsumata, Shiro Sakuragi

2016.3 

RFスパッタ法によるZnO薄膜の作製における Ga添加とその後の窒化処理の影響

荒木拓海, 岩田純一, 勝俣裕

2012年秋季第73回応用物理学会学術講演会  2012.9  応用物理学会

複合ターゲットを用いて 反応性スパッタ法により作製した AlN:Eu,Si薄膜の発光、構造的特性の評価

鍵政亮介, 梶原舜, 吉村啓佑, 勝俣裕

2012年秋季第73回応用物理学会学術講演会  2012.9  応用物理学会

Al<SUB>2</SUB>O<SUB>3</SUB>を添加したTiO<SUB>2</SUB>微粉末の 光学バンドギャップ

吉村 啓佑, 橋本 哲弥, 勝俣 裕

2012年秋季第73回応用物理学会学術講演会  2012.9  応用物理学会

Optical and structural characterizations of β-FeSi<SUB>2</SUB> synthesized by Fe ion implantation

勝俣裕,牟田高信,沈鴻烈,小林直人,長谷川雅考,柴田肇,山田昭政,牧田雄之助,轡田昇,植草新一郎,羽田野毅

第13回法政大学イオンビーム工学シンポジウム，東京  1994.12 

シリコン系半導体を用いた半導体固体電池の開発に関する研究

2019.4 - 2020.3